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AN3400 bảng dữ liệu(PDF) 23 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Analysis and simulation of a BJT complementary pair in a self-oscillating CFL solution
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AN3400 bảng dữ liệu(HTML) 23 Page - STMicroelectronics

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AN3400
Steady-state stage-wise circuit analysis
Doc ID 018840 Rev 1
23/78
System of equations 6
where ICBp and VCBp are, respectively, the current and voltage signal of the forward biased
C-B junction diode of the PNP bipolar. During this phase, in general, VEBp(t) is so that
0<VEBp(t)<VEBp-on for the PNP bipolar E-B junction diode but if it were VEBp(t)<0 the device
would work in reverse active region since it is VCBp(t)>0. Therefore, in this last case,
currents and voltages on the driving network are depicted by the information in Figure 14.
Figure 14.
Fifth stage: first re-circulating phase before PNP conduction time with
PNP device working in reverse active region
()
()t
V
t
V
C
−
=
()
( )
()
on
EBp
2
D
CBp
EBp
V
t
V
t
V
t
V
−
<
−
=
where
()
on
CBp
CBp
V
t
V
−
>
and
()
on
2
D
2
D
V
t
V
−
>
()
()dt
t
I
C
1
V
t
V
7
t
6
t
Cn
n
a
2
Cnor
Cn
∫
−
=
where
()
−
=
6
Cn
a
2
Cnor
t
V
V
()
()dt
t
I
C
1
V
t
V
7
t
6
t
Cp
p
a
2
Cpor
Cp
∫
+
=
where
()
−
=
6
Cp
a
2
Cpor
t
V
V
()
()
()
t
V
dt
d
C
t
I
Cn
n
Cn
⋅
−
=
()
()
()t
V
dt
d
C
t
I
Cp
p
Cp
⋅
=
()
( )
()
( )
( )
()t
I
t
I
t
I
t
I
t
I
t
I
RS
2
D
LP
Cp
Cn
CBp
=
−
=
+
=
( )
()
()
( )
()t
V
t
V
t
V
t
V
t
V
EBp
EBn
Rb
Cp
Cn
−
=
=
+
with
()
( ) 0
t
V
t
V
BEn
EBn
>
−
=
AM09805v1
L
c
Cp
Cn
Cs
Rs
Rb
Ls
VRs
IRs
VCn
VCp
ICn
ICp
IRb
VRb
ID2
ILP
Lp
VDD
Q1
Q2
D1
D2
VCs
VC
GND
PNP device in reverse
active region
PNP device in reverse
active region
First re-circulating phase
before PNP conduction
IBpnp
VD2
ICpnp
IEpnp
Q2
IBpnp
I



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