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AN2842 bảng dữ liệu(PDF) 14 Page - STMicroelectronics |
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AN2842 bảng dữ liệu(HTML) 14 Page - STMicroelectronics |
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14 / 22 page ![]() Approach to the study AN2842 14/22 Doc ID 15110 Rev 1 the same heat-sink, it is important to know their thermal distribution. In fact, two devices connected in parallel, but with different working temperatures, have different behaviors. The different working temperatures could be caused by other factors (another device mounted to the same heat-sink, different air flow by fan, etc.). Many PFC systems use the same heat- sink for power device and diode. In this case, the power device close to the diode shows a working temperature higher than the other. If the circuit does not have a feedback system, an increase in the temperature could cause failure of the system. In Figure 16, details of this phenomenon are shown. Figure 16. Instant of failure In the introduction of this document, the study was divided into two areas: the first, which has been explored in the previous paragraphs, is an analysis of current imbalances due to the external parameters of a power device. The second is an analysis of the intrinsic characteristics of a power MOSFET, which are predominant in the mismatching. In this section, we look at the influence of the voltage threshold VGS(th), RDS(on) and gfs parameters. 2.6 Differences in the VGS(th) The following analysis refers to a system with two devices connected in parallel based on the schematic in Figure 17. |
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