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AN2842 bảng dữ liệu(PDF) 14 Page - STMicroelectronics

tên linh kiện AN2842
Giải thích chi tiết về linh kiện  Paralleling of power MOSFETs in PFC topology
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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AN2842 bảng dữ liệu(HTML) 14 Page - STMicroelectronics

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Approach to the study
AN2842
14/22
Doc ID 15110 Rev 1
the same heat-sink, it is important to know their thermal distribution. In fact, two devices
connected in parallel, but with different working temperatures, have different behaviors. The
different working temperatures could be caused by other factors (another device mounted to
the same heat-sink, different air flow by fan, etc.). Many PFC systems use the same heat-
sink for power device and diode. In this case, the power device close to the diode shows a
working temperature higher than the other. If the circuit does not have a feedback system,
an increase in the temperature could cause failure of the system. In
Figure 16, details of this
phenomenon are shown.
Figure 16. Instant of failure
In the introduction of this document, the study was divided into two areas: the first, which
has been explored in the previous paragraphs, is an analysis of current imbalances due to
the external parameters of a power device. The second is an analysis of the intrinsic
characteristics of a power MOSFET, which are predominant in the mismatching. In this
section, we look at the influence of the voltage threshold VGS(th), RDS(on) and gfs
parameters.
2.6
Differences in the VGS(th)
The following analysis refers to a system with two devices connected in parallel based on
the schematic in
Figure 17.



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