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AN2385 bảng dữ liệu(PDF) 9 Page - STMicroelectronics |
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AN2385 bảng dữ liệu(HTML) 9 Page - STMicroelectronics |
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9 / 14 page ![]() AN2385 Determination of the power dissipation and its derating factor 9/14 3 Determination of the power dissipation and its derating factor The Power Dissipation value is the maximum power that the device can dissipate in continuous operating mode when the device works in "on state" and the thermal impedance is only due to RTHJC. The power dissipation depends on the case temperature. Typically, in Power MOSFET datasheets, it is reported at ambient temperature (25°C). In order to calculate the power dissipation value the consider RDSON value must be considered at the maximum junction temperature. It is possible to demonstrate that such value is around two times the values of RDSON at ambient temperature considering the data measured. Power Dissipation can be written as: Equation 5 Furthermore, PD can be established for any other fixed operation case temperature considering that the guaranteed maximum junction temperature is 150°C or 175°C (see Figure 5.). Figure 5. Power dissipation vs T The Linear Derating Factor of Power Dissipation factor is defined as the angular coefficient of the line shown in Figure 5. It can be calculated as: Equation 6 P D T25 ° C = () R DSON T JMAX I DSL () () I DSL 2 • T JMAX 25 ° C – R THJC --------------------------------- = = ∂P D ∂T ---------- P D T25 ° C = () T JMAX 25 ° C – --------------------------------- 1 R THLJC -------------------- = = |
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