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AN2344 bảng dữ liệu(PDF) 14 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Power MOSFET avalanche characteristics and ratings
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AN2344 bảng dữ liệu(HTML) 14 Page - STMicroelectronics

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Datasheet avalanche ratings
AN2344
14/27
Figure 9.
VDS/ID shapes with the Coil during the UIS
3.3.1
EAR (Energy during avalanche for repetitive pulse)
Often stated in the datasheet, this value is defined as the energy at IAR during repetitive
operation, and the value is usually calculated with a 10KHz power pulse train with a 50%
duty cycle and the nominal power rating of the device (see Equation 3).
Equation 3
For instance, if the available power of the MOSFET (PD in the datasheet) is 150W, the EAR
should be equal to 15mJ. However, this value is redundant and not very useful for the
design, as it gives very poor information about the maximum energy to be dissipated and
keep TJ below TJ(max). A quick way to evaluate the temperature during avalanche is to take
into account the extra power dissipation introduced by the repetitive avalanche, and to
calculate the heat sink size required to dissipate it. Because of a triangular pulse:
Equation 4
And the additional average power to be dissipated is expressed as:
Equation 5
where,
f= Frequency (see Equation 3),
tAV= Avalanche time,
V= Peak voltage, and
I= Peak current
EAR=power/f
E
1
2
---VI
t
AV
•
=
P
AV
Ef
•
1
2
---VI
t
AV
•
f
•
=
=



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