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AN3027
Designing a TM PFC
Doc ID 16134 Rev 4
17/41
Figure 7.
Conduction losses and total losses in the STF7NM50N MOSFET for the
L6563S TM PFC
From
Equation 33 using the data relevant to the MOSFET selected, and calculating the
losses at VACmin and VACmax, we observe that the maximum total loss occurs at VACmin
and is 2.61 W. From this number and the maximum ambient temperature
(12), the total
maximum thermal resistance required to keep the junction temperature below 125°C is:
Equation 34
If the result of
Equation 34 is lower than the junction-ambient thermal resistance given in the
MOSFET datasheet for the selected device package, a heatsink must be used.
For the STF7NM50N the junction - ambient thermal resistance is 62 °C/W, so a heatsink has
been used.
3.3.6
Boost diode selection
Following a similar criterion as that used for the MOSFET, the output rectifier can be
selected. A minimum breakdown voltage of 1.2·(Vout +
∆VOVP) and current rating higher
than 3·Iout from Equation 1 can be chosen for a rough initial selection of the rectifier. The
correct choice is then confirmed by the thermal calculation. If the diode junction temperature
operates within 125°C, the device has been selected correctly, otherwise a bigger device
must be selected.
In this 100 W application an STTH2L06, (600 V, 2 A) has been selected.
The rectifier AVG
Equation 1 and RMS Equation 8 current values and the parameter V
th
(rectifier threshold voltage) and Rd (dynamic resistance) given in the datasheet allow
calculating the rectifier losses.
From the STTH2L06 datasheet, Vth is 0.89 V, Rd is 0.08 Ω.
Equation 35
)
VAC
(
P
T
C
125
R
loss
ambx
th
−
°
=
W
C
29
W
58
.
2
C
50
C
125
R
th
°
=
°
−
°
=
rms
2
d
out
th
diode
ID
R
I
V
P
⋅
+
⋅
=
()
W
26
.
0
A
72
.
0
08
.
0
A
25
.
0
V
89
.
0
P
2
diode
=
⋅
Ω
+
⋅
=



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