TGF2018

180 um Discrete GaAs pHEMT

Datasheet: Rev. D 11-04-13

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Disclaimer: Subject to change without notice

© 2013 TriQuint

www.triquint.com

Absolute Maximum Ratings

Symbol

Parameter

Absolute

Continuous

Units

Drain-Source Voltage

(2)

12

8

V

Gate- Source Voltage

-7

-3

V

Drain Current

(2)

mA

Forward Gate Current

9

1.5

mA

Channel Temperature

(3)

175

(4)

150

(5)

°C

Storage Temperature

-65 to 150

-65 to 150

°C

Input Continuous Wave Power

(2)

16

at 3 dB Compression

dBm

Total Power Dissipation

0.96

0.64

W

Notes:

1. These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only,

and functional operation of the device at these conditions is not implied.

2. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum total power

dissipation listed in the table.

3. Junction operating temperature will directly affect the device median time to failure. For maximum life, it is recommended that

junction temperatures be maintained at the lowest possible levels.

4. When operated at this channel temperature, the median life is 1.0E+5 hours.

5. When operated at this channel temperature, the median life is 1.0E+6 hours.

Electrical Characteristics

Test conditions unless otherwise noted: Temperature = 25°C.

Symbol Parameter

Conditions

Min

Typ Max Units

P1dB

22

dBm

G1dB

Gain at P1dB

14

dB

PAE

PAE at P1dB

55

%

NF

50 ohm Noise Figure

1

dB

Saturated Drain Current

36

58

(1)

80

mA

Gm

Transconductance

70

mS

Pinch-Off Voltage

-1.5

-1.0

-0.5

V

Gate-Drain Breakdown Voltage

-15

-12

V

Gate-Source Breakdown Voltage

-15

V

Thermal Resistance

(2)

AuSn eutectic attach

88

°C/W

Notes:

1. Typical Standard Deviation of 2 mA (1 σ).

2. Based on IR Scan