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PD78F9232CS bảng dữ liệu(PDF) 24 Page - Renesas Technology Corp

tên linh kiện PD78F9232CS
Giải thích chi tiết về linh kiện  8-BIT SINGLE-CHIP MICROCONTROLLERS
PDF  30 Pages
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nhà sản xuất  RENESAS [Renesas Technology Corp]
Trang chủ  http://www.renesas.com
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Preliminary Product Information U18550EJ2V0PM
22
µPD78F9232CS, 78F9234CS
Flash Memory Programming Characteristics (TA = –40 to +85
°C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Supply current
IDD
VDD = 5.5 V
7.0
mA
Erasure count
Note 1
(per 1 block)
NERASE
TA =
−40 to +85°C
1000
Times
4.5 V
≤ VDD ≤ 5.5 V
0.8
s
3.5 V
≤ VDD < 4.5 V
1.0
s
TA =
−10 to +85°C,
NERASE
≤ 100
2.7 V
≤ VDD < 3.5 V
1.2
s
4.5 V
≤ VDD ≤ 5.5 V
4.8
s
3.5 V
≤ VDD < 4.5 V
5.2
s
TA =
−10 to +85°C,
NERASE
≤ 1000
2.7 V
≤ VDD < 3.5 V
6.1
s
4.5 V
≤ VDD ≤ 5.5 V
1.6
s
3.5 V
≤ VDD < 4.5 V
1.8
s
TA =
−40 to +85°C,
NERASE
≤ 100
2.7 V
≤ VDD < 3.5 V
2.0
s
4.5 V
≤ VDD ≤ 5.5 V
9.1
s
3.5 V
≤ VDD < 4.5 V
10.1
s
Chip erase time
TCERASE
TA =
−40 to +85°C,
NERASE
≤ 1000
2.7 V
≤ VDD < 3.5 V
12.3
s
4.5 V
≤ VDD ≤ 5.5 V
0.4
s
3.5 V
≤ VDD < 4.5 V
0.5
s
TA =
−10 to +85°C,
NERASE
≤ 100
2.7 V
≤ VDD < 3.5 V
0.6
s
4.5 V
≤ VDD ≤ 5.5 V
2.6
s
3.5 V
≤ VDD < 4.5 V
2.8
s
TA =
−10 to +85°C,
NERASE
≤ 1000
2.7 V
≤ VDD < 3.5 V
3.3
s
4.5 V
≤ VDD ≤ 5.5 V
0.9
s
3.5 V
≤ VDD < 4.5 V
1.0
s
TA =
−40 to +85°C,
NERASE
≤ 100
2.7 V
≤ VDD < 3.5 V
1.1
s
4.5 V
≤ VDD ≤ 5.5 V
4.9
s
3.5 V
≤ VDD < 4.5 V
5.4
s
Block erase time
TBERASE
TA =
−40 to +85°C,
NERASE
≤ 1000
2.7 V
≤ VDD < 3.5 V
6.6
s
Byte write time
TWRITE
TA =
−40 to +85°C, NERASE ≤ 1000
150
µs
Per 1 block
6.8
ms
Internal verify
TVERIFY
Per 1 byte
27
µs
Blank check
TBLKCHK
Per 1 block
480
µs
Retention years
TA = 85
°CNote 2, NERASE ≤ 1000
10
Years
Note 1. Depending on the erasure count (NERASE), the erase time varies. Refer to the chip erase time and block
erase time parameters.
2. When the average temperature when operating and not operating is 85
°C.
Remark When a product is first written after shipment, “erase
→ write” and “write only” are both taken as one rewrite.



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