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PD78F9232CS bảng dữ liệu(PDF) 24 Page - Renesas Technology Corp |
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PD78F9232CS bảng dữ liệu(HTML) 24 Page - Renesas Technology Corp |
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24 / 30 page ![]() Preliminary Product Information U18550EJ2V0PM 22 µPD78F9232CS, 78F9234CS Flash Memory Programming Characteristics (TA = –40 to +85 °C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Supply current IDD VDD = 5.5 V 7.0 mA Erasure count Note 1 (per 1 block) NERASE TA = −40 to +85°C 1000 Times 4.5 V ≤ VDD ≤ 5.5 V 0.8 s 3.5 V ≤ VDD < 4.5 V 1.0 s TA = −10 to +85°C, NERASE ≤ 100 2.7 V ≤ VDD < 3.5 V 1.2 s 4.5 V ≤ VDD ≤ 5.5 V 4.8 s 3.5 V ≤ VDD < 4.5 V 5.2 s TA = −10 to +85°C, NERASE ≤ 1000 2.7 V ≤ VDD < 3.5 V 6.1 s 4.5 V ≤ VDD ≤ 5.5 V 1.6 s 3.5 V ≤ VDD < 4.5 V 1.8 s TA = −40 to +85°C, NERASE ≤ 100 2.7 V ≤ VDD < 3.5 V 2.0 s 4.5 V ≤ VDD ≤ 5.5 V 9.1 s 3.5 V ≤ VDD < 4.5 V 10.1 s Chip erase time TCERASE TA = −40 to +85°C, NERASE ≤ 1000 2.7 V ≤ VDD < 3.5 V 12.3 s 4.5 V ≤ VDD ≤ 5.5 V 0.4 s 3.5 V ≤ VDD < 4.5 V 0.5 s TA = −10 to +85°C, NERASE ≤ 100 2.7 V ≤ VDD < 3.5 V 0.6 s 4.5 V ≤ VDD ≤ 5.5 V 2.6 s 3.5 V ≤ VDD < 4.5 V 2.8 s TA = −10 to +85°C, NERASE ≤ 1000 2.7 V ≤ VDD < 3.5 V 3.3 s 4.5 V ≤ VDD ≤ 5.5 V 0.9 s 3.5 V ≤ VDD < 4.5 V 1.0 s TA = −40 to +85°C, NERASE ≤ 100 2.7 V ≤ VDD < 3.5 V 1.1 s 4.5 V ≤ VDD ≤ 5.5 V 4.9 s 3.5 V ≤ VDD < 4.5 V 5.4 s Block erase time TBERASE TA = −40 to +85°C, NERASE ≤ 1000 2.7 V ≤ VDD < 3.5 V 6.6 s Byte write time TWRITE TA = −40 to +85°C, NERASE ≤ 1000 150 µs Per 1 block 6.8 ms Internal verify TVERIFY Per 1 byte 27 µs Blank check TBLKCHK Per 1 block 480 µs Retention years TA = 85 °CNote 2, NERASE ≤ 1000 10 Years Note 1. Depending on the erasure count (NERASE), the erase time varies. Refer to the chip erase time and block erase time parameters. 2. When the average temperature when operating and not operating is 85 °C. Remark When a product is first written after shipment, “erase → write” and “write only” are both taken as one rewrite. |
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