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AN3432 bảng dữ liệu(PDF) 14 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  How to choose a bypass diode for a silicon panel junction box
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AN3432
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Doc ID 019041 Rev 1
3.1.2
Thermal runaway risk
The thermal runaway results in the loss of temperature control, due to the inability to
exhaust the power losses generated by the diode operation.
In the bypass diode application, the most critical case is when the diode conducts and
suddenly turns off. At this specific time t0 the following rule is applied to eliminate thermal
runaway risk:
Equation 14
The junction temperature depends on the junction box thermal resistance between ambient
temperature (Ta) and diode case temperature (Tc) and the thermal resistance between the
diode junction and the diode case, given in the diode datasheet as the Rth(j-c) parameter.
The power losses and these parameters are linked by the thermal law.
Equation 15
and
The conduction losses are given by:
Equation 16
A graphical interpretation is presented in Figure 10 with STPS20L45C diode, the current is 8
A, the ambient temperature is 60 °C, Rth(c-a) = 3 °C/W, Rth(j-c) = 1.3 °C/W. The green curve is
the heat power that the junction can dissipate. The blue curve is the conduction losses
generated by the diode. The curves cross point gives the junction temperature at the
specific time t0. In this condition, the junction temperature Tj@t0 = 70 °C is shown in
Figure 10.
)
T
(
P
j@to
cond
j@to
rev
)
T
(
> P
j
Thermal
) =
T
(
P
(Tj -Ta)
Rth(j-c) + Rth(c-a)
)
T
(
P
j@to
cond
j@to
Thermal
)
T
(
= P
sc
j
sc
F
j
cond
I
)·
T
,
I
(
V
)
T
(
P
=



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