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UM1693 bảng dữ liệu(PDF) 45 Page - STMicroelectronics |
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UM1693 bảng dữ liệu(HTML) 45 Page - STMicroelectronics |
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45 / 196 page ![]() DocID025505 Rev 1 45/196 UM1693 Protection against battery transients 195 Figure 24. Recommended GND network for ISO 7637-2 (2011) level IV A second solution with an additional branch in parallel (R2 + low drop diode D) depends on specific considerations. The Table 8 gives a suggestion according to the Hybrid device type and to the logic level of Input pin adopted. The given suggestion, based on some experimental measures, take into account a minimum high state input voltage on Regulator's side and the maximum voltage drop on 15 k Ω I/O series resistance. This yields a maximum allowed GND voltage on the device's GND network for 5 V and 3.3 V system. • R1 must be chosen taking into account the two following limits: – Minimum value is chosen according to the signal clamp structure energy capability and maximum power dissipation allowed inside the component (the lower is the resistance value the higher is the Power dissipated during the pulses) – Maximum value is chosen to guarantee PowerMOS operation in full RON during reverse battery and a GND shift that guarantees device properly driven ON even in the worst case device limits (relevant parameter to be taken into account at Table 8. GND network proposals for Hybrids HSDs Device/VREG supply voltage Single/double channels VN7007AH-E VN7004AH-E VND7012AY-E Quad channels VNQ7040AY-E 5V Assumption: max allowed GND Shift: 1.67 V Only R1: 150 Ω (value for each driver) R1 = 270 Ω // (low drop D + series resistor R2 = 47 Ω) (value for each driver) Vz(D) > 150 V 3.3 V Assumption: max allowed GND Shift: 0.33 V Only R1: 33 Ω (value for each driver) Only R1 = 18 Ω (value for each driver) |
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