IRHM2C50SE datasheet(1/4 Pages) IRF

tên linh kiện	IRHM2C50SE

Giải thích chi tiết về linh kiện	TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)

PDF	4 Pages

Scroll/Zoom	100%

nhà sản xuất	IRF [International Rectifier]

Trang chủ	http://www.irf.com

Logo

1 / 4 page

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRHM2C50SE

600V

0.60

Ω

10.4A

IRHM7C50SE

Features:

n Radiation Hardened up to 1 x 105 Rads (Si)

n Single Event Burnout (SEB) Hardened

n Single Event Gate Rupture (SEGR) Hardened

n Gamma Dot (Flash X-Ray) Hardened

n Neutron Tolerant

n Identical Pre- and Post-Electrical Test Conditions

n Repetitive Avalanche Rating

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Electrically Isolated

n Ceramic Eyelets

Absolute Maximum Ratings

Parameter

IRHM2C50SE, IRHM7C50SE

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

10.4

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

6.5

IDM

Pulsed Drain Current

41.6

PD @ TC = 25°C

Max. Power Dissipation

150

W

Linear Derating Factor

1.2

W/K

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

500

mJ

IAR

Avalanche Current

10.4

A

EAR

Repetitive Avalanche Energy

15

mJ

dv/dt

Peak Diode Recovery dv/dt

3.0

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in (1.6 mm) from case for 10 sec)

Weight

9.3 (typical)

g

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

Provisional Data Sheet No. PD-9.1252B

Pre-Radiation

600Volt, 0.60

Ω

Ω, (SEE) RAD HARD HEXFET

International Rectifier’s (SEE) RAD HARD technology

HEXFETs demonstrate virtual immunity to SEE fail-

ure. Additionally, under identical pre- and post-radia-

tion test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 105 Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 1012 Rads (Si)/Sec, and return to normal opera-

tion within a few microseconds. Since the SEE pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality and

reliability in the industry.

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits in space and weapons environments.

oC

A

REPETITIVE AVALANCHE AND dv/dt RATED

IRHM2C50SE

HEXFET® TRANSISTOR

IRHM7C50SE

Next Data Sheet

Index

Previous Datasheet

To Order

Số phần tương tự - IRHM2C50SE

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRHM3054	166Kb / 8P	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
	IRHM3130	488Kb / 12P	RADIATION HARDENED POWER MOSFET THRU-HOLE
	IRHM3150	444Kb / 12P	RADIATION HARDENED POWER MOSFET THRU-HOLE
	IRHM3160	137Kb / 8P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
	IRHM3250	271Kb / 12P	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

More results

Mô tả tương tự - IRHM2C50SE

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	C50IRF	164Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
	IRFM260	442Kb / 8P	TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)
	IRHI7360SE	112Kb / 4P	TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=24.3A)
	IRHI7460SE	131Kb / 4P	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
	IRHM7360SE	146Kb / 4P	TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A)
	IRHN2C50SE	110Kb / 4P	TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
	IRHN7130	508Kb / 14P	TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
	IRHNA7460SE	139Kb / 4P	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
	JANTX2N6782	232Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A)
	JANTX2N6845	232Kb / 6P	POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A)

More results

IRHM2C50SE bảng dữ liệu(PDF) 1 Page - International Rectifier

IRHM2C50SE bảng dữ liệu(HTML) 1 Page - International Rectifier

Số phần tương tự - IRHM2C50SE

Mô tả tương tự - IRHM2C50SE

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL