Elektronische Bauelemente

SSG9904

Ω

Ω

Ω

Dual-N Enhancement Mode Power MOSFET

25-Apr-2014 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Static

Drain-Source Breakdown Voltage

40

-

-

V

Breakdown Voltage Temp.

Coefficient

BV

△

T

-

0.034

-

V / °C

Gate-Threshold Voltage

1

-

2.5

V

Forward Transconductance

-

14

-

S

Gate-Body Leakage

-

-

±100

nA

-

-

1

Zero Gate Voltage Drain Current

-

-

5

µA

-

-

26

Drain-Source On-Resistance

2

-

-

35

m

Total Gate Charge

-

5.5

-

Gate-Source Charge

-

1.25

-

Gate-Drain (“Miller”) Charge

-

2.5

-

nC

Turn-On Delay Time

-

8.9

-

Rise Time

-

2.2

-

Turn-Off Delay Time

-

41

-

Fall Time

-

2.7

-

nS

Input Capacitance

-

593

-

Output Capacitance

-

76

-

Reverse Transfer Capacitance

-

56

-

pF

f=1.0MHz

Guaranteed Avalanche Characteristics

Single Pulse Avalanche Energy

5

EAS

9

-

-

mJ

Source-Drain Diode

Forward On Voltage

2

-

-

1.2

V

-

7.2

-

A

-

14.5

-

A

Notes:

1. Surface mounted on a 1 inch

2. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%.

3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=17.8A.

4. The power dissipation is limited by 150℃ junction temperature.

5. The Min. value is 100% EAS tested guarantee.

6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.