IRGPH40FD2 datasheet(2/8 Pages) IRF

2 / 8 page

C-286

Parameter

Min. Typ. Max. Units

Conditions

Total Gate Charge (turn-on)

—

IC = 17A

Qge

Gate - Emitter Charge (turn-on)

—

VCC = 400V

Qgc

Gate - Collector Charge (turn-on)

—

See Fig. 8

td(on)

Turn-On Delay Time

—

TJ = 25°C

Rise Time

—

IC = 17A, VCC = 800V

td(off)

Turn-Off Delay Time

—

320

550

VGE = 15V, RG = 10Ω

Fall Time

—

370

630

Energy losses include "tail" and

Eon

Turn-On Switching Loss

—

2.6

—

diode reverse recovery.

Eoff

Turn-Off Switching Loss

—

5.4

—

See Fig. 9, 10, 11, 18

Ets

Total Switching Loss

—

8.0

td(on)

Turn-On Delay Time

—

TJ = 150°C,

See Fig. 9, 10, 11, 18

Rise Time

—

IC = 17A, VCC = 800V

td(off)

Turn-Off Delay Time

—

670

—

VGE = 15V, RG = 10Ω

Fall Time

—

930

—

Energy losses include "tail" and

Ets

Total Switching Loss

—

diode reverse recovery.

Internal Emitter Inductance

—

Measured 5mm from package

Cies

Input Capacitance

—

1200

—

VGE = 0V

Coes

Output Capacitance

—

VCC = 30V

See Fig. 7

Cres

Reverse Transfer Capacitance

—

ƒ = 1.0MHz

trr

Diode Reverse Recovery Time

—

TJ = 25°C

See Fig.

—

106

160

TJ = 125°C

IF = 8.0A

Irr

Diode Peak Reverse Recovery Current

—

4.5

8.0

TJ = 25°C

See Fig.

—

6.2

TJ = 125°C

V R = 200V

Qrr

Diode Reverse Recovery Charge

—

140

380

TJ = 25°C

See Fig.

—

335

880

TJ = 125°C

di/dt = 200A/µs

di(rec)M/dt

Diode Peak Rate of Fall of Recovery

—

133

—

A/µs

TJ = 25°C

See Fig.

During tb

—

TJ = 125°C

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

1200

—

VGE = 0V, IC = 250µA

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage

—

1.3

—

V/°C

VGE = 0V, IC = 1.0mA

VCE(on)

Collector-to-Emitter Saturation Voltage

—

2.5

3.3

IC = 17A

VGE = 15V

—

3.2

—

IC = 29A

See Fig. 2, 5

—

3.0

—

IC = 17A, TJ = 150°C

VGE(th)

Gate Threshold Voltage

3.0

—

5.5

VCE = VGE, IC = 250µA

∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage

—

-13

—

mV/°C

VCE = VGE, IC = 250µA

gfe

Forward Transconductance

5.0

—

VCE = 100V, IC = 17A

ICES

Zero Gate Voltage Collector Current

—

250

µA

VGE = 0V, VCE = 1200V

—

1000

VGE = 0V, VCE = 1200V, T J = 150°C

VFM

Diode Forward Voltage Drop

—

2.6

3.3

IC = 8.0A

See Fig. 13

—

2.3

3.0

IC = 8.0A, T J = 150°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V

IRGPH40FD2

Pulse width

≤ 80µs; duty factor ≤ 0.1%.

VCC=80%(VCES), VGE=20V, L=10µH,

RG= 10Ω, ( See fig. 19 )

Pulse width 5.0µs,

single shot.

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Repetitive rating; V GE=20V, pulse width

limited by max. junction temperature.

( See fig. 20 )

Notes:

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