IRGPF50F datasheet(1/6 Pages) IRF

tên linh kiện	IRGPF50F

Giải thích chi tiết về linh kiện	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=28A)

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nhà sản xuất	IRF [International Rectifier]

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C-267

IRGPF50F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-Case

------

0.64

RθCS

Case-to-Sink, flat, greased surface

------

0.24

------

°C/W

RθJA

Junction-to-Ambient, typical socket mount

------

40

Wt

Weight

------

6 (0.21)

------

g (oz)

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

VCES = 900V

VCE(sat) ≤ 2.7V

@VGE = 15V, IC = 28A

E

C

G

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

Absolute Maximum Ratings

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

900

V

IC @ TC = 25°C

Continuous Collector Current

51

IC @ TC = 100°C

Continuous Collector Current

28

A

ICM

Pulsed Collector Current

100

ILM

Clamped Inductive Load Current

100

VGE

Gate-to-Emitter Voltage

±20

V

EARV

Reverse Voltage Avalanche Energy

20

mJ

PD @ TC = 25°C

Maximum Power Dissipation

200

W

PD @ TC = 100°C

Maximum Power Dissipation

78

TJ

Operating Junction and

-55 to +150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Thermal Resistance

TO-247AC

PD - 9.767A

Revision 0

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Số phần tương tự - IRGPF50F

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRGPF50F	98Kb / 35P	Fit Rate / Equivalent Device Hours

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Mô tả tương tự - IRGPF50F

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRGB440U	252Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)
	IRGBC20S	274Kb / 7P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=10A)
	IRGBC30S	252Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A)
	IRGBC30U	244Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A)
	IRGBC40U	244Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)
	IRGBF30F	253Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)
	IRGP440U	254Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)
	IRGPF20F	260Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=5.3A)
	IRGPF30F	256Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)
	IRGPF40F	259Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V,@Vge=15V, Ic=17A)

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