IRGPF40F datasheet(1/6 Pages) IRF

tên linh kiện	IRGPF40F

Giải thích chi tiết về linh kiện	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V,@Vge=15V, Ic=17A)

PDF	6 Pages

Scroll/Zoom	100%

nhà sản xuất	IRF [International Rectifier]

Trang chủ	http://www.irf.com

Logo

1 / 6 page

C-261

IRGPF40F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-Case

—

0.77

RθCS

Case-to-Sink, flat, greased surface

—

0.24

—

°C/W

RθJA

Junction-to-Ambient, typical socket mount

—

40

Wt

Weight

—

6 (0.21)

—

g (oz)

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to

10kHz) See Fig. 1 for Current vs. Frequency

curve

VCES = 900V

VCE(sat) ≤ 3.3V

@VGE = 15V, IC = 17A

E

C

G

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

Absolute Maximum Ratings

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

900

V

IC @ TC = 25°C

Continuous Collector Current

31

IC @ TC = 100°C

Continuous Collector Current

17

A

ICM

Pulsed Collector Current

62

ILM

Clamped Inductive Load Current

62

VGE

Gate-to-Emitter Voltage

±20

V

EARV

Reverse Voltage Avalanche Energy

15

mJ

PD @ TC = 25°C

Maximum Power Dissipation

160

W

PD @ TC = 100°C

Maximum Power Dissipation

65

TJ

Operating Junction and

-55 to +150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Thermal Resistance

TO-247AC

PD - 9.770A

Revision 0

Next Data Sheet

Index

Previous Datasheet

To Order

Số phần tương tự - IRGPF40F

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRGPF40F	98Kb / 35P	Fit Rate / Equivalent Device Hours

More results

Mô tả tương tự - IRGPF40F

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRG4PC30F	145Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRGB440U	252Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)
	IRGBC30F	246Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A)
	IRGBF30F	253Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)
	IRGPC30FD2	422Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=17A)
	IRGPF20F	260Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=5.3A)
	IRGPF30F	256Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)
	IRGPF50F	261Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=28A)
	IRGPH40F	255Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A)
	IRGPH40FD2	425Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)

More results

IRGPF40F bảng dữ liệu(PDF) 1 Page - International Rectifier

IRGPF40F bảng dữ liệu(HTML) 1 Page - International Rectifier

Số phần tương tự - IRGPF40F

Mô tả tương tự - IRGPF40F

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL