IRGPC40MD2 datasheet(1/2 Pages) IRF

tên linh kiện	IRGPC40MD2

Giải thích chi tiết về linh kiện	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A)

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C-397

IRGPC40MD2

Short Circuit Rated

Fast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY

DIODE

Features

• Short circuit rated -10µs @125°C, V GE = 15V

• Switching-loss rating includes all "tail" losses

• HEXFRED

TM soft ultrafast diodes

• Optimized for medium operating frequency ( 1 to

10kHz)

E

G

n-channel

C

VCES = 600V

VCE(sat) ≤ 3.0V

@VGE = 15V, IC = 24A

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control

and other applications requiring short circuit withstand capability.

Thermal Resistance

Absolute Maximum Ratings

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-Case - IGBT

—

0.77

RθJC

Junction-to-Case - Diode

—

1.7

°C/W

RθCS

Case-to-Sink, flat, greased surface

—

0.24

—

RθJA

Junction-to-Ambient, typical socket mount

—

40

Wt

Weight

—

6 (0.21)

—

g (oz)

Preliminary Data Sheet

PD - 9.1084

TO-247AC

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

40

IC @ TC = 100°C

Continuous Collector Current

24

ICM

Pulsed Collector Current

80

A

ILM

Clamped Inductive Load Current

80

IF @ TC = 100°C

Diode Continuous Forward Current

15

IFM

Diode Maximum Forward Current

80

tsc

Short Circuit Withstand Time

10

µs

VGE

Gate-to-Emitter Voltage

± 20

V

PD @ TC = 25°C

Maximum Power Dissipation

160

W

PD @ TC = 100°C

Maximum Power Dissipation

65

TJ

Operating Junction and

-55 to +150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw.

10 lbf•in (1.1 N•m)

Revision 2

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Số phần tương tự - IRGPC40MD2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRGPC40MD2	98Kb / 35P	Fit Rate / Equivalent Device Hours

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRGBC30FD2	414Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=31A)
	IRGBC40M-S	88Kb / 2P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)
	IRGPC20MD2	418Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A)
	IRGPC30FD2	422Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=17A)
	IRGPC30MD2	421Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A)
	IRGPC40FD2	425Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)
	IRGPC40M	91Kb / 2P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)
	IRGPC50MD2	434Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=35A)
	IRGPC50UD2	441Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)
	RGBC40M	82Kb / 2P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)

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