IRGPC30MD2 datasheet(1/8 Pages) IRF

tên linh kiện	IRGPC30MD2

Giải thích chi tiết về linh kiện	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A)

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nhà sản xuất	IRF [International Rectifier]

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C-389

IRGPC30MD2

Short Circuit Rated

Fast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY

DIODE

Features

• Short circuit rated -10µs @125°C, V GE = 15V

• Switching-loss rating includes all "tail" losses

• HEXFRED

TM soft ultrafast diodes

• Optimized for medium operating frequency ( 1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

E

G

n-channel

C

VCES = 600V

VCE(sat) ≤ 2.9V

@VGE = 15V, IC = 16A

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control

and other applications requiring short circuit withstand capability.

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-Case - IGBT

—

1.2

RθJC

Junction-to-Case - Diode

—

2.5

°C/W

RθCS

Case-to-Sink, flat, greased surface

—

0.24

—

RθJA

Junction-to-Ambient, typical socket mount

—

40

Wt

Weight

—

6 (0.21)

—

g (oz)

PD - 9.1082

TO-247AC

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

26

IC @ TC = 100°C

Continuous Collector Current

16

ICM

Pulsed Collector Current

52

A

ILM

Clamped Inductive Load Current

52

IF @ TC = 100°C

Diode Continuous Forward Current

12

IFM

Diode Maximum Forward Current

52

tsc

Short Circuit Withstand Time

10

µs

VGE

Gate-to-Emitter Voltage

± 20

V

PD @ TC = 25°C

Maximum Power Dissipation

100

W

PD @ TC = 100°C

Maximum Power Dissipation

42

TJ

Operating Junction and

-55 to +150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw.

10 lbf•in (1.1 N•m)

Absolute Maximum Ratings

Revision 2

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Số phần tương tự - IRGPC30MD2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRGPC30MD2	98Kb / 35P	Fit Rate / Equivalent Device Hours

More results

Mô tả tương tự - IRGPC30MD2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRGBC30FD2	414Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=31A)
	IRGBC30MD2-S	425Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=16A)
	IRGBC30MD2	416Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A)
	IRGPC20MD2	418Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A)
	IRGPC30FD2	422Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=17A)
	IRGPC30M	250Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)
	IRGPC40FD2	425Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)
	IRGPC40MD2	85Kb / 2P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A)
	IRGPC50MD2	434Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=35A)
	IRGPC50UD2	441Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)

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