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IRG4RC10SD bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRG4RC10SD bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4RC10SD 2 www.irf.com Switching Characteristics @ TJ = 25°C (unless otherwise specified) Details of note Q through T are on the last page Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage S 600 —— VVGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.64 — V/°CVGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 1.58 1.7 IC = 8.0A VGE = 15V — 2.05 — VIC = 14.0A See Fig. 2, 5 — 1.68 — IC = 8.0A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -9.5 — mV/°CVCE = VGE, IC = 250µA gfe Forward Transconductance T 3.65 5.48 — SVCE = 100V, IC =8.0A ICES Zero Gate Voltage Collector Current —— 250 µA VGE = 0V, VCE = 600V —— 1000 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.5 1.8 V IC =4.0A See Fig. 13 — 1.4 1.7 IC =4.0A, TJ = 150°C IGES Gate-to-Emitter Leakage Current —— ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge (turn-on) — 15 22 IC = 8.0A Qge Gate - Emitter Charge (turn-on) — 2.42 3.6 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) — 6.53 9.8 VGE = 15V td(on) Turn-On Delay Time — 76 — TJ = 25°C tr Rise Time — 32 — ns IC = 8.0A, VCC = 480V td(off) Turn-Off Delay Time — 815 1200 VGE = 15V, RG = 100Ω tf Fall Time — 720 1080 Energy losses include "tail" and Eon Turn-On Switching Loss — 0.31 — diode reverse recovery. Eoff Turn-Off Switching Loss — 3.28 — mJ See Fig. 9, 10, 18 Ets Total Switching Loss — 3.60 10.9 Ets Total Switching Loss — 1.46 2.6 mJ IC = 5.0A td(on) Turn-On Delay Time — 70 — TJ = 150°C, See Fig. 10,11, 18 tr Rise Time — 36 — ns IC = 8.0A, VCC = 480V td(off) Turn-Off Delay Time — 890 — VGE = 15V, RG = 100Ω tf Fall Time — 890 — Energy losses include "tail" and Ets Total Switching Loss — 3.83 — mJ diode reverse recovery. LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 280 — VGE = 0V Coes Output Capacitance — 30 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 4.0 —ƒ = 1.0MHz trr Diode Reverse Recovery Time — 28 42 ns TJ = 25°C See Fig. — 38 57 TJ = 125°C 14 IF =4.0A Irr Diode Peak Reverse Recovery Current — 2.9 5.2 A TJ = 25°C See Fig. — 3.7 6.7 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 40 60 nC TJ = 25°C See Fig. — 70 105 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 280 — A/µs TJ = 25°C See Fig. During tb — 235 — TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions |
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