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IRG4PSC71U bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRG4PSC71U bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRG4PSC71U 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ––– 340 520 IC = 60A Qge Gate - Emitter Charge (turn-on) ––– 44 66 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ––– 160 240 VGE = 15V td(on) Turn-On Delay Time ––– 34 ––– tr Rise Time ––– 50 ––– TJ = 25°C td(off) Turn-Off Delay Time ––– 56 84 IC = 60A, VCC = 480V tf Fall Time ––– 86 130 VGE = 15V, RG = 5.0Ω Eon Turn-On Switching Loss ––– 0.42 ––– Energy losses include "tail" Eoff Turn-Off Switching Loss ––– 1.99 ––– mJ See Fig. 10, 11, 13, 14 Ets Total Switching Loss ––– 2.41 3.2 td(on) Turn-On Delay Time ––– 30 ––– TJ = 150°C, tr Rise Time ––– 49 ––– IC = 60A, VCC = 480V td(off) Turn-Off Delay Time ––– 129 ––– VGE = 15V, RG = 5.0Ω tf Fall Time ––– 175 ––– Energy losses include "tail" Ets Total Switching Loss ––– 4.5 ––– mJ See Fig. 13, 14 LE Internal Emitter Inductance ––– 13 ––– nH Measured 5mm from package Cies Input Capacitance ––– 7500 ––– VGE = 0V Coes Output Capacitance ––– 720 ––– pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ––– 93 ––– ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 ––– ––– V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.45 ––– V/°C VGE = 0V, IC = 5.0mA ––– 1.67 2.0 IC = 60A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage ––– 1.95 ––– IC = 100A See Fig.2, 5 ––– 1.71 ––– IC = 60A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ––– 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA gfe Forward Transconductance 47 70 ––– S VCE = 50V, IC = 60A ––– ––– 500 VGE = 0V, VCE = 600V ––– ––– 2.0 VGE = 0V, VCE = 10V, TJ = 25°C ––– ––– 5.0 mA VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) V CC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. Current limited by the package, (Die current = 100A) |
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