IRG4PC50FD

4

www.irf.com

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs.

Case Temperature

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

1.0

1.5

2.0

2.5

- 6 0

- 4 0

- 2 0

0

2 0

4 0

6 0

8 0

100

120

140

160

V

= 1 5V

80µs PU LSE W ID TH

GE

A

T , Ju nction Te m p eratu re (°C )

J

I

= 78 A

I

= 39 A

I

= 2 0 A

C

C

C

0

10

20

30

40

50

60

70

25

50

75

100

125

150

T

, C ase Tem perature (°C)

C

V

= 15 V

GE

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

10

t , R ectangular P ulse D uration (sec)

1

D = 0 .5 0

0.01

0.02

0.05

0.1 0

0.2 0

S IN G L E P U L S E

( T HERM AL RESPO NSE)

P

t

2

1

t

DM

N o te s :

1 . D u ty fa c to r D = t

/ t

2 . P e a k T = P

x Z

+ T

1

2

J

DM

th J C

C