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IRG4PC30KD bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRG4PC30KD bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4PC30KD 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 67 100 IC = 16A Qge Gate - Emitter Charge (turn-on) — 11 16 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 25 37 VGE = 15V td(on) Turn-On Delay Time — 60 — tr Rise Time — 42 — TJ = 25°C td(off) Turn-Off Delay Time — 160 250 IC = 16A, VCC = 480V tf Fall Time — 80 120 VGE = 15V, RG = 23Ω Eon Turn-On Switching Loss — 0.60 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.58 — mJ and diode reverse recovery Ets Total Switching Loss — 1.18 1.6 See Fig. 9,10,14 tsc Short Circuit Withstand Time 10 —— µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V td(on) Turn-On Delay Time — 58 — TJ = 150°C, See Fig. 11,14 tr Rise Time — 42 — IC = 16A, VCC = 480V td(off) Turn-Off Delay Time — 210 — VGE = 15V, RG = 23Ω, tf Fall Time — 160 — Energy losses include "tail" Ets Total Switching Loss — 1.69 — mJ and diode reverse recovery LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 920 — VGE = 0V Coes Output Capacitance — 110 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 27 —ƒ = 1.0MHz trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig. — 80 120 TJ = 125°C 14 IF = 12A Irr Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig. — 5.6 10 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig. — 220 600 TJ = 125°C 16 di/dt = 200Aµs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig. During tb — 160 — TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage S 600 —— VVGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.54 — V/°CVGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.21 2.7 IC = 16A VGE = 15V — 2.88 — VIC = 28A See Fig. 2, 5 — 2.36 — IC = 16A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -12 — mV/°CVCE = VGE, IC = 250µA gfe Forward Transconductance T 5.4 8.1 — SVCE = 100V, IC = 16A ICES Zero Gate Voltage Collector Current —— 250 µA VGE = 0V, VCE = 600V —— 2500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 12A See Fig. 13 — 1.3 1.6 IC = 12A, TJ = 150°C IGES Gate-to-Emitter Leakage Current —— ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ns ns |
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