IRG4BC30SS datasheet(1/9 Pages) IRF

tên linh kiện	IRG4BC30SS

Giải thích chi tiết về linh kiện	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

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nhà sản xuất	IRF [International Rectifier]

Trang chủ	http://www.irf.com

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Parameter

Max.

Units

VCES

Collector-to-Emitter Breakdown Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

34

IC @ TC = 100°C

Continuous Collector Current

18

A

ICM

Pulsed Collector Current

68

ILM

Clamped Inductive Load Current

68

VGE

Gate-to-Emitter Voltage

±20

V

EARV

Reverse Voltage Avalanche Energy

10

mJ

PD @ TC = 25°C

Maximum Power Dissipation

100

PD @ TC = 100°C

Maximum Power Dissipation

42

TJ

Operating Junction and

-55 to +150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (0.063 in. (1.6mm) from case )

IRG4BC30S-S

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

E

C

G

n-channel

Features

• Standard: optimized for minimum saturation

voltage and low operating frequencies (< 1kHz)

• Generation 4 IGBT design provides tight

parameter distribution and high efficiency

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

Benefits

VCES = 600V

VCE(on) typ. = 1.4V

@VGE = 15V, IC = 18A

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

1.2

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient, typical socket mount

–––

40

Wt

Weight

1.44

–––

g (oz)

Thermal Resistance

Absolute Maximum Ratings

W

12/28/00

www.irf.com

1

D2Pak

PD - 94069

Số phần tương tự - IRG4BC30SS

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRG4BC30SS	204Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

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Mô tả tương tự - IRG4BC30SS

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRG4BC10S	157Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
	IRG4BC20S	157Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
	IRG4BC20U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
	IRG4BC30S	161Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
	IRG4BC40S	157Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
	IRG4BC40U	169Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
	IRG4PC30S	120Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
	IRG4PC40U	148Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
	IRG4PC50F	146Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
	IRG4BC30SS	204Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

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