Elektronische Bauelemente

SMS3400A

Ω

Ω

Ω

N-Channel Enhancement Mode Power MOSFET

06-Jan-2014 Rev.A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

30

-

-

V

Gate-Threshold Voltage

3

0.7

-

1.4

V

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current

-

-

1

µA

Forward Transconductance

3

8

-

-

S

Diode Forward Voltage

3

-

-

1

V

-

-

32

-

-

38

Static Drain-Source On-Resistance

3

-

-

45

m

Switching Parameters

4

Total Gate Charge

-

9.5

-

Gate-Source Charge

-

1.5

-

Gate-Drain Change

-

3

-

nC

Input Capacitance

-

1155

-

Output Capacitance

-

108

-

Reverse Transfer Capacitance

-

84

-

pF

f =1.0MHz

Turn-on Delay Time

-

5

-

Rise Time

-

7

-

Turn-off Delay Time

-

40

-

Fall Time

-

6

-

nS

Gate Resistance

-

-

3.6

Note:

1.

Repetitive Rating : Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t < 5 sec.

3.

Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production testing.