IRFY340CM datasheet(1/6 Pages) IRF

tên linh kiện	IRFY340CM

Giải thích chi tiết về linh kiện	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=8.7A)

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1 / 6 page

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRFY340CM

400V

0.55

Ω

8.7A

Provisional Data Sheet No. PD 9.1290B

HEXFET® POWER MOSFET

HEXFET technology is the key to International Rectifier’s

advanced line of power MOSFET transistors. The effi-

cient geometry design achieves very low on-state re-

sistance combined with high transconductance.

HEXFET transistors also feature all of the well-estab-

lished advantages of MOSFETs, such as voltage con-

trol, very fast switching, ease of paralleling and electri-

cal parameter temperature stability. They are well-suited

for applications such as switching power supplies, mo-

tor controls, inverters, choppers, audio amplifiers, high

energy pulse circuits, and virtually any application where

high reliability is required.

The HEXFET transistor’s totally isolated package elimi-

nates the need for additional isolating material between

the device and the heatsink. This improves thermal effi-

ciency and reduces drain capacitance.

IRFY340CM

Features

n Hermetically Sealed

n Electrically Isolated

n Simple Drive Requirements

n Ease of Paralleling

N-CHANNEL

400 Volt, 0.55

Ω HEXFET

Absolute Maximum Ratings

Parameter

IRFY340CM

Units

ID @ VGS=10V, TC = 25°C

Continuous Drain Current

8.7

ID @ VGS=10V, TC = 100°C

Continuous Drain Current

5.5

A

IDM

Pulsed Drain Current

35

PD @ TC = 25°C

Max. Power Dissipation

100

W

Linear Derating Factor

0.8

W/K

VGS

Gate-to-Source Voltage

±20

V

EAS

Single PulseAvalance Energy

520

mJ

IAR

Avalance Current

8.7

A

EAR

Repetitive Avalanche Energy

10

mJ

dv/dt

Peak Diode Recovery dv/dt

4.0

V/ns

TJ

Operating Junction

-55 to 150

Tstg

Storage Temperature Range

°C

LeadTemperature

300 (0.063 in (1.6mm) from

case for 10 sec)

Weight

4.3 (typical)

g

°C

n Ceramic Eyelets

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Số phần tương tự - IRFY340CM

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRFY340C	148Kb / 7P	POWER MOSFET THRU-HOLE (TO-257AA)
	IRFY340C	148Kb / 7P	Simple Drive Requirements
	IRFY340C	148Kb / 7P	Simple Drive Requirements

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International Rectifier	IRC740	221Kb / 8P	Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=10A)
	IRFI740G	169Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)
	IRFI740GLC	221Kb / 8P	Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.7A)
	IRFN340	211Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=10A)
	IRFN350	212Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.315ohm, Id=14A)
	IRFP340	172Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=11A)
	JANTX2N6760	234Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.00ohm, Id=5.5A)
	JANTX2N6768	233Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.300ohm, Id=14A)
	JANTX2N6786	230Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)
	JANTX2N6800	230Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A)

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