IRFP150 datasheet(1/8 Pages) IRF

tên linh kiện	IRFP150

Giải thích chi tiết về linh kiện	Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)

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IRFP150N

HEXFET® Power MOSFET

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-247 package is preferred for commercial-

industrial applications where higher power levels

preclude the use of TO-220 devices. The TO-247 is

similar but superior to the earlier TO-218 package

because of its isolated mounting hole.

S

D

G

VDSS = 100V

RDS(on) = 0.036W

ID = 42A

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Description

TO-247AC

www.irf.com

1

PD- 91503C

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

42

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

30

A

IDM

Pulsed Drain Current

140

PD @TC = 25°C

Power Dissipation

160

W

Linear Derating Factor

1.1

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

420

mJ

IAR

Avalanche Current

22

A

EAR

Repetitive Avalanche Energy

16

mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

RqJC

Junction-to-Case

–––

0.95

RqCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

RqJA

Junction-to-Ambient

–––

40

Thermal Resistance

Số phần tương tự - IRFP150

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Fairchild Semiconductor	IRFP150	261Kb / 7P	Advanced Power MOSFET
IXYS Corporation	IRFP150	44Kb / 1P	HIGH VOLTAGE POWER MOSFET DIE
Vishay Siliconix	IRFP150	1Mb / 8P	Power MOSFET 07-Jul-08
Vishay Siliconix	IRFP150	1Mb / 9P	Power MOSFET 14-Mar-11
Inchange Semiconductor ...	IRFP150	444Kb / 2P	iscN-Channel MOSFET Transistor

More results

Mô tả tương tự - IRFP150

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRC540	222Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A)
	IRF1310N	96Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
	IRF1310NS	156Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
	IRF3710S	184Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)
	IRF520VS	129Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
	IRFR2407	129Kb / 10P	Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A??
	IRFR4104	182Kb / 11P	Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A)
	IRFRU5410	215Kb / 10P	Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A)
	IRFR2905ZPBF	278Kb / 12P	HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 14.5m廓 , ID = 42A )
	IRFR4104PBF	273Kb / 12P	HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 5.5m廓 , ID = 42A )

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