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IRFP048N bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRFP048N bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFP048N Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.016 Ω VGS = 10V, ID = 37A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 22 ––– ––– S VDS = 25V, ID = 32A ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 89 ID = 32A Qgs Gate-to-Source Charge ––– ––– 20 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 39 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 11 ––– VDD = 28V tr Rise Time ––– 78 ––– ID = 32A td(off) Turn-Off Delay Time ––– 32 ––– RG = 5.1 Ω tf Fall Time ––– 48 ––– RD = 0.85Ω, See Fig. 10
Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1900 ––– VGS = 0V Coss Output Capacitance ––– 620 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 5.0 IDSS Drain-to-Source Leakage Current 13 V DD = 25V, starting TJ = 25°C, L = 530µH RG = 25Ω, IAS = 32A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: ISD ≤ 32A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFZ48N data and test conditions Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)
––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 37A, VGS = 0V trr Reverse Recovery Time ––– 94 140 ns TJ = 25°C, IF = 32A Qrr Reverse RecoveryCharge ––– 360 540 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics S D G A 45 210 |
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