IRFN3710 datasheet(2/4 Pages) IRF

2 / 4 page

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

—

VGS = 0V, ID = 1.0 mA

∆BVDSS/∆TJ Temp. Coefficient of Breakdown Voltage

—

0.120

—

V/°C

Reference to 25°C, ID = 1.0 mA

RDS(on)

Static Drain-to-Source

—

0.028

VGS = 12V, ID =28A

On-State Resistance

—

0.032

Ω

VGS = 12V, ID = 45A

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

VDS = VGS, ID = 250 mA

gfs

Forward Transconductance

—

S (

)VDS > 15V, IDS = 28A

IDSS

Zero Gate Voltage Drain Current

—

µA

VDS=0.8 x Max Rating,VGS=0V

—

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

-100

VGS = -20V

Total Gate Charge

—

190

VGS =10V, ID =45 A

Qgs

Gate-to-Source Charge

—

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain (“Miller”) Charge

—

td(on)

Turn-On Delay Time

—

VDD = 50V, ID =45A,

Rise Time

—

RG = 4.3Ω

td(off)

Turn-Off Delay Time

—

Fall Time

—

Internal Drain Inductance

—

8.7

—

Internal Source Inductance

—

8.7

—

Ciss

Input Capacitance

—

3000

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

640

—

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

—

330

—

IRFN3710 Device

Measured from the

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Modified MOSFET

symbol showing the

internal inductances.

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