IRFD224 datasheet(1/8 Pages) IRF

tên linh kiện	IRFD224

Giải thích chi tiết về linh kiện	Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=0.63A)

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nhà sản xuất	IRF [International Rectifier]

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Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10 V

0.63

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10 V

0.40

A

IDM

Pulsed Drain Current

5.0

PD @TC = 25°C

Power Dissipation

1.0

W

Linear Derating Factor

0.0083

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

60

mJ

IAR

Avalanche Current

0.63

A

EAR

Repetitive Avalanche Energy

0.10

mJ

dv/dt

Peak Diode Recovery dv/dt

4.8

V/ns

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

IRFD224

HEXFET® Power MOSFET

PD -9.1272

Revision 0

VDSS = 250V

RDS(on) = 1.1Ω

ID = 0.63A

Absolute Maximum Ratings

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RθJA

Junction-to-Ambient

—

120

°C/W

Dynamic dv/dt Rating

Repetitive Avalanche Rated

For Automatic Insertion

End Stackable

Fast Switching

Ease of paralleling

Simple Drive Requirements

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The 4-pin DIP package is a low-cost machine-insertable case style which can be

stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain

serves as a thermal link to the mounting surface for power dissipation levels up to

1 watt.

Description

A

HD-1

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Số phần tương tự - IRFD224

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Vishay Siliconix	IRFD224	1Mb / 8P	Power MOSFET 23-Jun-08
Vishay Siliconix	IRFD224	410Kb / 9P	Power MOSFET 30-Aug-2021
International Rectifier	IRFD224PBF	918Kb / 8P	HEXFET POWER MOSFET (VDSS = 250V , RDS(on) = 1.1廓 , ID = 0.63A)
Vishay Siliconix	IRFD224PBF	1Mb / 8P	Power MOSFET 23-Jun-08
Vishay Siliconix	IRFD224PBF	410Kb / 9P	Power MOSFET 30-Aug-2021

More results

Mô tả tương tự - IRFD224

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRF634	171Kb / 6P	Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
	IRF644	173Kb / 6P	Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
	IRFD214	497Kb / 8P	Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A)
	IRFI614G	173Kb / 6P	Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.1A)
	IRFI624G	170Kb / 6P	Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.4A)
	IRFI9634G	120Kb / 8P	Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A)
	IRFL214	174Kb / 6P	Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.79A)
	IRFP264N	222Kb / 8P	Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)
	IRFR224	175Kb / 6P	Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)
	IRFD224PBF	918Kb / 8P	HEXFET POWER MOSFET (VDSS = 250V , RDS(on) = 1.1廓 , ID = 0.63A)

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