IRFBC20L datasheet(1/10 Pages) IRF

tên linh kiện	IRFBC20L

Giải thích chi tiết về linh kiện	Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

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IRFBC20S/L

PRELIMINARY

HEXFET® Power MOSFET

PD - 9.1014

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

2.5

RθJA

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

40

Thermal Resistance

°C/W

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

2.2

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

1.4

A

IDM

Pulsed Drain Current

8.0

PD @TA = 25°C

Power Dissipation

3.1

W

PD @TC = 25°C

Power Dissipation

50

W

Linear Derating Factor

0.40

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

84

mJ

IAR

Avalanche Current

2.2

A

EAR

Repetitive Avalanche Energy

5.0

mJ

dv/dt

Peak Diode Recovery dv/dt

3.0

V/ns

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

VDSS = 600V

RDS(on) = 4.4Ω

ID = 2.2A

2

D

P a k

T O - 262

S

D

G

7/22/97

l Surface Mount (IRFBC20S)

l Low-profile through-hole (IRFBC20L)

l Available in Tape & Reel (IRFBC20S)

l Dynamic dv/dt Rating

l 150°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Third generation HEXFETs from international Rectifier provide the designer with the

best combination of fast switching, ruggedized device design, low on-resistance and

cost-effectiveness.

The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes

up to HEX-4. It provides the highest power capability and the lowest possible on-

resistance in any existing surface mount package. The D2Pak is suitable for high

current applications because of its low internal connection resistance and can

dissipate up to 2.0W in a typical surface mount application. The through-hole version

(IRFBC20L) is available for low-profile applications.

Description

Số phần tương tự - IRFBC20L

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Vishay Siliconix	IRFBC20L	247Kb / 8P	Power MOSFET 03-Jun-08
Vishay Siliconix	IRFBC20L	310Kb / 11P	Power MOSFET 20-Sep-2021
International Rectifier	IRFBC20LPBF	381Kb / 10P	HEXFET Power MOSFET
Vishay Siliconix	IRFBC20LPBF	247Kb / 8P	Power MOSFET 03-Jun-08
Vishay Siliconix	IRFBC20LPBF	329Kb / 11P	Power MOSFET 30-May-11

More results

Mô tả tương tự - IRFBC20L

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	C50IRF	164Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
	IRFB9N60A	135Kb / 8P	Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)
	IRFBC20	171Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
	IRFBC40S	350Kb / 10P	Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
	IRFDC20	464Kb / 8P	Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A)
	IRFIBC20G	167Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)
	IRFIBC30G	169Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)
	IRFPC48	214Kb / 8P	Power MOSFET(Vdss=600V, Rds(on)=0.82ohm, Id=8.9A)
	IRFR214	169Kb / 6P	Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)
	IRFRC20	169Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A)

More results

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