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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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IRFB13N50APBF. bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRFB13N50APBF. bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFB13N50A 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 14A, VGS = 0V trr Reverse Recovery Time ––– 370 550 ns TJ = 125°C, IF = 14A Qrr Reverse RecoveryCharge ––– 4.4 6.5 µC di/dt = 100A/µs iRRM Reverse RecoveryCurrent ––– 21 31 A ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 8.1 ––– ––– SVDS = 50V, ID = 8.4A Qg Total Gate Charge ––– ––– 81 ID = 14A Qgs Gate-to-Source Charge ––– ––– 20 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 36 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 15 ––– VDD = 250V tr Rise Time ––– 39 ––– ID = 14A td(off) Turn-Off Delay Time ––– 39 ––– RG = 7.5Ω tf Fall Time ––– 31 ––– VGS = 10V,See Fig. 10 Ciss Input Capacitance ––– 1910 ––– VGS = 0V Coss Output Capacitance ––– 290 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 11 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 2730 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 82 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 160 ––– VGS = 0V, VDS = 0V to 400V Dynamic @ TJ = 25°C (unless otherwise specified) ns S D G Diode Characteristics 14 56 A Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.450 Ω VGS = 10V, ID = 8.4A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 500V, VGS = 0V ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) ISD ≤ 14A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Notes: Starting T J = 25°C, L = 5.7mH, RG = 25Ω, IAS = 14A, dv/dt = 7.6V/ns. (See Figure 12a) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. |
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