IRF9952 datasheet(1/10 Pages) IRF

tên linh kiện	IRF9952

Giải thích chi tiết về linh kiện	Power MOSFET(Vdss=-30V)

PDF	10 Pages

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nhà sản xuất	IRF [International Rectifier]

Trang chủ	http://www.irf.com

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N-Channel

P-Channel

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

± 20

TA = 25°C

3.5

-2.3

TA = 70°C

2.8

-1.8

Pulsed Drain Current

IDM

16

-10

Continuous Source Current (Diode Conduction)

IS

1.7

-1.3

TA = 25°C

2.0

TA = 70°C

1.3

Single Pulse Avalanche Energy

EAS

44

57

mJ

Avalanche Current

IAR

2.0

-1.3

A

Repetitive Avalanche Energy

EAR

0.25

mJ

Peak Diode Recovery dv/dt

dv/dt

5.0

-5.0

V/ ns

Junction and Storage Temperature Range

TJ,TSTG

-55 to + 150 °C

PRELIMINARY

HEXFET® Power MOSFET

PD - 9.1561A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

8/25/97

SO-8

l Generation V Technology

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Surface Mount

l Very Low Gate Charge and

Switching Losses

l Fully Avalanche Rated

IRF9952

Description

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambient

RθJA

62.5

°C/W

Continuous Drain Current

Maximum Power Dissipation

A

ID

PD

V

W

Symbol

Maximum

Units

D1

N-CH A N NE L M O S F E T

P -C H AN N E L M O SF ET

D1

D2

G1

S2

G2

S1

T o p V iew

8

1

2

3

4

5

6

7

N-Ch P-Ch

VDSS

30V

-30V

RDS(on) 0.10Ω 0.25Ω

Recommended upgrade: IRF7309 or IRF7319

Lower profile/smaller equivalent: IRF7509

Số phần tương tự - IRF9952

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRF9952PBF	224Kb / 10P	HEXFET Power MOSFET
	IRF9952PBF	229Kb / 10P	ULTRA LOW ON RESISTANCE
	IRF9952PBF	229Kb / 10P	ULTRA LOW ON RESISTANCE
	IRF9952QPBF	280Kb / 10P	HEXFET Power MOSFET
	IRF9952QPBF	269Kb / 10P	Advanced Process Technology

More results

Mô tả tương tự - IRF9952

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRF5805	126Kb / 9P	Power MOSFET(Vdss=-30V)
	IRF7413	123Kb / 8P	Power MOSFET(Vdss=30V, Id=12A)
	IRF7466	233Kb / 8P	Power MOSFET(Vdss=30V, Id=11A)
	IRF7509	217Kb / 8P	Power MOSFET(Vdss=-30V)
	IRF7705	146Kb / 8P	Power MOSFET(Vdss=-30V)
	IRF7706	152Kb / 8P	Power MOSFET(Vdss=-30V)
	IRF7726	95Kb / 9P	Power MOSFET(Vdss=-30V)
	IRF7751	162Kb / 8P	Power MOSFET(Vdss=-30V)
	IRF7752	117Kb / 7P	Power MOSFET(Vdss=30V)
	IRLML5203	137Kb / 9P	Power MOSFET(Vdss=-30V)

More results

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