IRF940 datasheet(1/7 Pages) IRF

tên linh kiện	IRF940

Giải thích chi tiết về linh kiện	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

PDF	7 Pages

Scroll/Zoom	100%

nhà sản xuất	IRF [International Rectifier]

Trang chủ	http://www.irf.com

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PRELIMINARY

HEXFET® Power MOSFET

PD - 9.1562A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

9/15/97

SO-8

VDSS = 30V

RDS(on) = 0.030Ω

l Generation V Technology

l Ultra Low On-Resistance

l N-Channel MOSFET

l Surface Mount

l Very Low Gate Charge and

Switching Losses

l Fully Avalanche Rated

IRF9410

Description

Top V iew

8

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D

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S

A

S

A

Recommended upgrade: IRF7403 or IRF7413

Lower profile/smaller equivalent: IRF7603

Symbol

Maximum

Units

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

± 20

TA = 25°C

7.0

TA = 70°C

5.8

Pulsed Drain Current

IDM

37

Continuous Source Current (Diode Conduction)

IS

2.8

TA = 25°C

2.5

TA = 70°C

1.6

Single Pulse Avalanche Energy

EAS

70

mJ

Avalanche Current

IAR

4.2

A

Repetitive Avalanche Energy

EAR

0.25

mJ

Peak Diode Recovery dv/dt

dv/dt

5.0

V/ ns

Junction and Storage Temperature Range

TJ, TSTG

-55 to + 150

°C

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambient

RθJA

50

°C/W

Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)

Continuous Drain Current

Maximum Power Dissipation

A

ID

PD

V

W

Số phần tương tự - IRF940

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRF9410PBF	170Kb / 7P	HEXFET짰 Power MOSFET
	IRF9410PBF	175Kb / 7P	GENERATION V TECHNOLOGY
	IRF9410PBF	175Kb / 7P	GENERATION V TECHNOLOGY
	IRF9410TRPBF	175Kb / 7P	GENERATION V TECHNOLOGY

More results

Mô tả tương tự - IRF940

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRF5800	98Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)
	IRF7413A	116Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)
	IRF7416	116Kb / 9P	Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
	IRF7503	114Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
	IRF7530	83Kb / 8P	Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)
	IRF7603	113Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)
	IRF7606	102Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)
	IRF7607	77Kb / 8P	Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)
	IRF7750	110Kb / 7P	Power MOSFET(Vdss=-20V, Rds(on)=0.030ohm)
	SI4435DY	82Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm

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