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IRF7401 bảng dữ liệu(PDF) 1 Page - International Rectifier

tên linh kiện IRF7401
Giải thích chi tiết về linh kiện  Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)
PDF  9 Pages
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nhà sản xuất  IRF [International Rectifier]
Trang chủ  http://www.irf.com
Logo IRF - International Rectifier

IRF7401 bảng dữ liệu(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
PD - 9.1244C
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7401
SO -8
VDSS = 20V
RDS(on) = 0.022Ω
Parameter
Max.
Units
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ 4.5V
10
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
8.7
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
7.0
IDM
Pulsed Drain Current

35
PD @TA = 25°C
Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt
‚
5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
A
To p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
02/13/01
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
„
–––
50
°C/W


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