IRF7301 datasheet(1/9 Pages) IRF

tên linh kiện	IRF7301

Giải thích chi tiết về linh kiện	Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)

PDF	9 Pages

Scroll/Zoom	100%

nhà sản xuất	IRF [International Rectifier]

Trang chủ	http://www.irf.com

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1 / 9 page

HEXFET® Power MOSFET

PD - 9.1238C

8/25/97

l Generation V Technology

l Ultra Low On-Resistance

l Dual N-Channel Mosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple devices can be used in

an application with dramatically reduced board space. The package is designed

for vapor phase, infra red, or wave soldering techniques. Power dissipation of

greater than 0.8W is possible in a typical PCB mount application.

IRF7301

SO-8

D1

D2

G1

S2

G2

S1

T o p V iew

8

1

2

3

4

5

6

7

Parameter

Max.

Units

ID @ TA = 25°C

10 Sec. Pulsed Drain Current, VGS @ 4.5V

5.7

ID @ TA = 25°C

Continuous Drain Current, VGS @ 4.5V

5.2

ID @ TA = 70°C

Continuous Drain Current, VGS @ 4.5V

4.1

IDM

Pulsed Drain Current

21

PD @TA = 25°C

Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/°C

VGS

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

TJ,TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

A

VDSS = 20V

RDS(on) = 0.050Ω

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient

–––

62.5

°C/W

Số phần tương tự - IRF7301

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
EVER SEMICONDUCTOR CO.,...	IRF7301	409Kb / 7P	MOSFET Rev:2023A2
International Rectifier	IRF7301PBF	237Kb / 9P	HEXFET Power MOSFET
International Rectifier	IRF7301PBF	243Kb / 9P	GENERATION V TECHNOLOGY
Guangdong Youtai Semico...	IRF7301TR	461Kb / 7P	Generation V Technology
EVER SEMICONDUCTOR CO.,...	IRF7301TR	409Kb / 7P	MOSFET Rev:2023A2

More results

Mô tả tương tự - IRF7301

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRCZ34	130Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A)
	IRF5850	126Kb / 9P	Power MOSFET(Vdss=-20V, Rds(on)=0.135ohm)
	IRF7303	111Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
	IRF7401	118Kb / 9P	Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)
	IRF7504	115Kb / 8P	Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)
	IRF7530	83Kb / 8P	Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)
	IRF7555	71Kb / 7P	Power MOSFET(Vdss=-20V, Rds(on)=0.055ohm)
	IRF7604	134Kb / 8P	Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm)
	IRF7663	77Kb / 7P	Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)
	IRF7750	110Kb / 7P	Power MOSFET(Vdss=-20V, Rds(on)=0.030ohm)

More results

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