IRF3205S datasheet(1/10 Pages) IRF

tên linh kiện	IRF3205S

Giải thích chi tiết về linh kiện	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

PDF	10 Pages

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nhà sản xuất	IRF [International Rectifier]

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IRF3205S/L

HEXFET® Power MOSFET

03/09/01

Thermal Resistance

www.irf.com

1

VDSS = 55V

RDS(on) = 8.0mΩ

ID = 110A

S

D

G

Advanced HEXFET® Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area.

This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest power

capability and the lowest possible on-resistance in any existing surface

mount package. The D2Pak is suitable for high current applications

because of its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRF3205L) is available for low-profile

applications.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Description

D2Pak

IRF3205S

TO-262

IRF3205L

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.75

°C/W

RθJA

Junction-to-Ambient (PCB mounted, steady-state)

*

–––

40

PD - 94149

Absolute Maximum Ratings

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

110

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

80

A

IDM

Pulsed Drain Current

390

PD @TC = 25°C

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

VGS

Gate-to-Source Voltage

± 20

V

IAR

Avalanche Current

62

A

EAR

Repetitive Avalanche Energy

20

mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Số phần tương tự - IRF3205S

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRF3205S	609Kb / 10P	HEXFET Power MOSFET
International Rectifier	IRF3205S	618Kb / 11P	Advanced Process Technology
Kersemi Electronic Co.,...	IRF3205S	1Mb / 10P	Advanced Process Technology
Inchange Semiconductor ...	IRF3205S	266Kb / 2P	isc N-Channel MOSFET Transistor
EVER SEMICONDUCTOR CO.,...	IRF3205S	505Kb / 4P	N-Ch 60V Fast Switching MOSFETs Rev:2023A2

More results

Mô tả tương tự - IRF3205S

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRF3205	92Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??
	IRF7458	120Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A)
	IRF9Z34N	108Kb / 8P	Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
	IRF9Z34NS	162Kb / 10P	Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
	IRFBA1405P	238Kb / 9P	Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A??
	IRFI1010N	109Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A)
	IRFI3205	107Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=64A)
	IRFP064N	107Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??
	IRFR2605	345Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
	IRFZ24N	123Kb / 8P	Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

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