IRF1902 datasheet(1/9 Pages) IRF

tên linh kiện	IRF1902

Giải thích chi tiết về linh kiện	Power MOSFET(Vdss=20V)

PDF	9 Pages

Scroll/Zoom	100%

nhà sản xuất	IRF [International Rectifier]

Trang chủ	http://www.irf.com

Logo

1 / 9 page

Parameter

Max.

Units

VDS

Drain- Source Voltage

20

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ 4.5V

4.2

ID @ TA= 70°C

Continuous Drain Current, VGS @ 4.5V

3.4

A

IDM

Pulsed Drain Current

17

PD @TA = 25°C

Power Dissipation

2.5

PD @TA = 70°C

Power Dissipation

1.6

Linear Derating Factor

0.02

mW/°C

VGS

Gate-to-Source Voltage

± 12

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

11/15/01

Absolute Maximum Ratings

W

www.irf.com

1

IRF1902

HEXFET® Power MOSFET

VDSS

RDS(on) max (mΩ)

Ω)

ID

20V

85@VGS = 4.5V

4.0A

170@VGS = 2.7V

3.2A

SO-8

T op V iew

8

1

2

3

4

5

6

7

D

G

S

A

S

A

These N-Channel HEXFET power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the extremely low on-resistance

per silicon area. This benefit provides the designer

with an extremely efficient device for use in battery

and load management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

Description

l Ultra Low On-Resistance

l N-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

Symbol

Parameter

Typ.

Max.

Units

RθJL

Junction-to-Drain Lead

–––

20

RθJA

Junction-to-Ambient

–––

50

°C/W

Thermal Resistance

PD - 94282A

Số phần tương tự - IRF1902

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRF1902PBF	134Kb / 9P	HEXFET Power MOSFET
International Rectifier	IRF1902TRPBF	139Kb / 9P	Ultra Low On-Resistance
BYCHIP ELECTRONICS CO.,...	IRF1902TRPBF	1Mb / 5P	N-Channel Enhancement Mode Power MOSFET v1.0

More results

Mô tả tương tự - IRF1902

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRF5806	218Kb / 8P	Power MOSFET(Vdss=-20V)
	IRF5810	208Kb / 9P	Power MOSFET(Vdss=-20V)
	IRF5852	239Kb / 9P	Power MOSFET(Vdss=20V)
	IRF6601	130Kb / 8P	DirectFET??Power MOSFET(Vdss=20V)
	IRF7507	216Kb / 8P	Power MOSFET(Vdss=-20V)
	IRF7700	155Kb / 9P	Power MOSFET(Vdss=-20V)
	IRF7707	154Kb / 8P	Power MOSFET(Vdss=-20V)
	IRF7755	249Kb / 8P	Power MOSFET(Vdss=-20V)
	IRF7757	132Kb / 9P	Power MOSFET(Vdss=20V)
	IRF7106	158Kb / 7P	Power MOSFET(Vdss=-20V)

More results

IRF1902 bảng dữ liệu(PDF) 1 Page - International Rectifier

IRF1902 bảng dữ liệu(HTML) 1 Page - International Rectifier

Số phần tương tự - IRF1902

Mô tả tương tự - IRF1902

Html Pages

1 2 3 4 5 6 7 8 9

bảng dữ liệu tải về

Link URL