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MMBT3904 bảng dữ liệu(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

tên linh kiện MMBT3904
Giải thích chi tiết về linh kiện  NPN Plastic Encapsulated Transistor
PDF  6 Pages
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nhà sản xuất  SECOS [SeCoS Halbleitertechnologie GmbH]
Trang chủ  http://www.secosgmbh.com
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MMBT3904 bảng dữ liệu(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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MMBT3904
200 mA, 40 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
30-Aug-2010 Rev. C
Page 2 of 6
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(Continued)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(3)
V(BR)CEO
40
-
Vdc
IC= 1mAdc, IB=0
Collector-Base Breakdown Voltage
V(BR)CBO
60
-
Vdc
IC = 10μAdc, IE = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
-
Vdc
IE = 10μAdc, IC=0
Base Cut-Off Current
IBL
-
50
nAdc
VCE= 30Vdc, VEB= 3.0Vdc
Collector Cut-Off Current
ICEX
-
50
nAdc
VCE= 30Vdc, VEB= 3.0Vdc
ON CHARACTERISTICS
(3)
DC Current Gain
hFE(1)
40
-
IC= 0.1mAdc, VCE= 1Vdc
hFE(2)
70
-
IC= 1.0mAdc, VCE= 1Vdc
hFE(3)
100
300
IC= 10mAdc, VCE= 1Vdc
hFE(4)
60
-
IC= 50mAdc, VCE= 1Vdc
hFE(5)
30
-
IC= 100mAdc, VCE= 1Vdc
Collector-Emitter Saturation Voltage
(3)
VCE(sat)
-
0.2
Vdc
IC= 10mAdc, IB =1mAdc
-
0.3
IC = 50mAdc, IB = 5mAdc
Base-Emitter Saturation Voltage
(3)
VBE(sat)
0.65
0.85
Vdc
IC= 10mAdc, IB =1mAdc
-
0.95
IC = 50mAdc, IB =5mAdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
300
-
MHz
IC= 10mAdc, VCE= 20Vdc, f=100MHz
Output Capacitance
Cobo
-
4.0
pF
VCB=5.0Vdc, IE=0, f=1.0MHz
Input Capacitance
Cibo
-
8.0
pF
VEB= 0.5Vdc, IC=0, f=1.0MHz
Input Impedance
hie
1.0
10
kΩ
VCE= 10 Vdc, IC= 1.0mAdc, f=1.0kHz
Voltage Feedback Radio
hre
0.5
8.0
x 10
-4
VCE= 10 Vdc, IC= 1.0mAdc, f=1.0kHz
Small-Signal Current Gain
hfe
100
400
VCE= 10 Vdc, IC= 1.0mAdc, f=1.0kHz
Output Admittance
Hoe
1.0
40
μmhos VCE= 10 Vdc, IC= 1.0mAdc, f=-1.0kHz
Noise Figure
NF
-
5.0
dB
VCE= 5.0 Vdc, IC= 100μAdc, RS=1.0KΩ,
f=1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
-
35
nS
VCC=3Vdc,VBE=-0.5Vdc
IC=10mAdc, IB1 =1mAdc
Rise Time
tr
-
35
Storage Time
ts
-
200
VCC=3Vdc,
IC=10mAdc,IB1= IB2=1mAdc
Fall Time
tf
-
50
NOTE:
1.
FR-5=1.0 x 0.75 x 0.062 in.
2.
Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.
Pulse Test: Pulse Width ≦ 300μS, Duty Cycle ≦ 2.0%



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