BAS16HT1G datasheet(1/2 Pages) SUNMATE

tên linh kiện	BAS16HT1G

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200mA Surface Mount Switching Diode

BAS16HT1G

1 of 2

Features

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

Mechanical Data

· Case Molded Plastic

K

L

M

J

C

H

BA

SOD-323

Dim

Min

Max

A

0.25

0.35

B

1.20

1.40

C

2.30

2.70

H

1.60

1.80

J

0.00

0.10

K

1.0

1.1

L

0.20

0.40

M

0.10

0.15

α

0°

8°

All Dimensions in mm

Ratings at 25

o

C ambient temperature unless otherwise specified.

SYMBOLS

Continuous Reverse Voltage

Peak Forward Current

Peak Forward Surge Current

VR

IF

IFSM

VALUE

75

200

500

UNITS

Vdc

mAdc

Ratings at 25

o

C ambient temperature unless otherwise specified.

SYMBOLS

Continuous Reverse Voltage

Peak Forward Current

Peak Forward Surge Current

VR

IF

IFSM

VALUE

75

200

500

UNITS

Vdc

mAdc

Ratings at 25

o

C ambient temperature unless otherwise specified.

SYMBOLS

Continuous Reverse Voltage

Peak Forward Current

Peak Forward Surge Current

VR

IF

IFSM

VALUE

75

200

500

UNITS

Vdc

mAdc

Ratings at 25

o

C ambient temperature unless otherwise specified.

SYMBOLS

Continuous Reverse Voltage

Peak Forward Current

Peak Forward Surge Current

VR

IF

IFSM

VALUE

75

200

500

UNITS

Vdc

mAdc

Ratings at 25

o

C ambient temperature unless otherwise specified.

SYMBOLS

Continuous Reverse Voltage

Peak Forward Current

Peak Forward Surge Current

VR

IF

IFSM

VALUE

75

200

500

UNITS

Vdc

mAdc

SYMBOLS

Reverse Voltage Leakage Current

Reverse Breakdown Voltage

Forward Voltage

Junction Capacitance

Forward Recovery Voltage

Reverse Recovery Time

Stored Charge

( VR=75Vdc )

( VR=75Vdc, TJ=150

oC )

( VR=25Vdc, TJ=150

oC )

( IBR=100uAdc )

( IF=1.0mAdc )

( IF=10mAdc )

( IF=50mAdc )

( IF=150mAdc )

( VR=0, f=1.0MHz )

( IF=10mAdc, tr=20nS )

( IF=IR=10mAdc, RL=50

)

( IF=10mAdc, to VR=5.0Vdc, RL=500

)

IR

V( BR )

VF

CJ

VFR

trr

QS

UNITS

MIN.

MAX.

-

1.0

50

30

uAdc

Vdc

75

-

0.72

0.86

1.00

1.25

Vdc

-

2.0

1.75

6.0

45

-

pF

Vdc

nS

pC

CHARACTERISTIC

Symbol

Parameter

Value

Units

VRRM

Maximum Repetitive Reverse Voltage

85

V

IF(AV)

Average Rectified Forward Current

200

mA

IFSM

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

600

mA

TSTG

Storage Temperature Range

-65 to +150

°C

TJ

Operating Junction Temperature

-55 to +150

°C

Symbol

Parameter

Test Conditions

Min.

Max.

Units

VR

Breakdown Voltage

IR = 5.0µA85

V

VF

Forward Voltage

IF = 1.0mA

IF = 10mA

IF = 50mA

IF = 150mA

715

855

1.0

1.25

mV

V

IR

Reverse Leakage

VR = 75V

VR = 25V, TA = 150°C

VR = 75V, TA = 150°C

1.0

30

50

µA

CT

Total Capacitance

VR = 0, f = 1.0MHz

2.0

pF

trr

Reverse Recovery Time

IF = IR = 10mA, IRR = 1.0mA,

RL = 100Ω

6.0

ns

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

* These ratings are limiting values above which the serviceability of the diode may be impaired.

Số phần tương tự - BAS16HT1G

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