RFT2P03L datasheet(2/9 Pages) INTERSIL

2 / 9 page

7-7-20

Absolute Maximum Ratings

TA = 25

oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

-30

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-30

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20V

Drain Current

Continuous (Note 2) (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

2.1

Figure 5

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Figures 6, 14, 15

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.1

0.009

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TA = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

-30

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

-1

-3

Zero Gate Voltage Drain Current

IDSS

VDS = -30V, VGS = 0V

-1

µA

VDS = -30V, VGS = 0V, TA = 150

-50

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance

rDS(ON)

ID = 2.1A, VGS = -10V (Figure 9)

0.120

0.150

Ω

ID = 2.1A, VGS = -4.5V (Figure 9)

0.300

0.360

Ω

Turn-On Time

tON

VDD = -15V, ID ≅ 2.1A,

RL = 7.1Ω, VGS = −10V,

RGS = 21Ω

Turn-On Delay Time

td(ON)

-13

Rise Time

-18

Turn-Off Delay Time

td(OFF)

-43

Fall Time

-24

Turn-Off Time

tOFF

100

Total Gate Charge

Qg(TOT)

VGS = 0V to -20V

VDD = -15V, ID ≅ 2.1A,

RL = 7.1Ω

Ig(REF) = -1.0mA

(Figure 13)

-27

Gate Charge at -10V

Qg(-10)

VGS = 0V to -10V

Threshold Gate Charge

Qg(TH)

VGS = 0V to -2V

1.3

1.6

Input Capacitance

CISS

VDS = -25V, VGS = 0V,

f = 1MHz

(Figure 12)

620

Output Capacitance

COSS

240

Reverse Transfer Capacitance

CRSS

-30

Thermal Resistance Junction to Ambient

RθJA

Pad Area = 0.171 in2 (See note 2)

110

oC/W

Pad Area = 0.068 in2 (See Tech Brief 377)

128

oC/W

Pad Area = 0.026 in2 (See Tech Brief 377)

147

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = -2.1A

-1.25

Reverse Recovery Time

trr

ISD = -2.1A, dISD/dt = 100A/µs-

Reverse Recovered Charge

QRR

ISD = -2.1A, dISD/dt = 100A/µs-

NOTE:

2. 110oC/W measured using FR-4 board with 0.171 in2 footprint for 1000 seconds.

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