1

Semiconductor

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

RFP2P08, RFP2P10

-2A, -80V and -100V, 3.500 Ohm,

P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate

power field effect transistors designed for applications such

as switching regulators, switching converters. motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA_____.

Features

• -2A, -80V and -100V

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Symbol

Packaging

TO-220AB

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFP2P08

TO-220AB

RFP2P08

RFP2P10

TO-220AB

RFP2P10

NOTE: When ordering, use entire part number.

D

G

S

GATE

DRAIN (FLANGE)

SOURCE

DRAIN

October 1998

File Number

2870.1

[ /Title

(RFP2P

08,

RFP2P

10)

/Sub-

ject (-

2A, -

80V

and -

100V,

3.500

Ohm,

P-Chan-

nel

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor,

P-Chan-

nel

Power

MOS-

FETs,

TO-

220AB)

/Cre-

ator ()

/DOCI

NFO

pdf-

Data Sheet