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RFP2N08 bảng dữ liệu(PDF) 1 Page - Intersil Corporation |
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RFP2N08 bảng dữ liệu(HTML) 1 Page - Intersil Corporation |
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1 / 4 page ![]() 5-1 Semiconductor Features • 2A, 80V and 100V •rDS(ON) 1.05Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282. Symbol Packaging JEDEC TO-220AB Ordering Information PART NUMBER PACKAGE BRAND RFP2N08 TO-220AB RFP2N08 RFP2N10 TO-220AB RFP2N10 NOTE: When ordering, use entire part number. D G S SOURCE DRAIN GATE DRAIN (FLANGE) July 1998 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1998 RFP2N08, RFP2N10 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs File Number 2883.1 |
Số phần tương tự - RFP2N08 |
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Mô tả tương tự - RFP2N08 |
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