RFD12N06RLE datasheet(2/6 Pages) INTERSIL

2 / 6 page

6-13

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFD12N06RLE,

RFD12N06RLESM,

RFP12N06RLE

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

-5 to10

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.32

W/oC

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

Electrostatic Discharge Rating ESD, MIL-STD-883, Category B(2)

Refer to UIS SOA Curve

2kV

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA1

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

µA

VDS = 0.8 x Rated BVDSS,VGS = 0V, TC = 150

oC-

µA

Gate to Source Leakage Current

IGSS

VGS = -5 to 10V

±10

µA

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 12A, VGS = 5V (Figures 7, 8)

0.135

Ω

ID = 12A, VGS = 4V

0.160

Ω

Turn-On Time

t(ON)

VDD = 30V, ID ≈ 6A, RL = 5Ω, RGS = 6.25Ω,

VGS = 5V, (Figures 15, 16)

Turn-On Delay Time

td(ON)

-12

Rise Time

-20

Turn-Off Delay Time

td(OFF)

-24

Fall Time

-12

Turn-Off Time

t(OFF)

Total Gate Charge

Qg(TOT)

VGS = 0V to 10V

VDD = 48V, ID = 12A,

RL = 4Ω,

IG(REF) = 0.25mA

(Figures 17, 18)

Gate Charge at 5V

Qg(5)

VGS = 0V to 5V

Threshold Gate Charge

Qg(TH)

VGS = 0V to 1V

1.5

Thermal Resistance Junction to Case

RθJC

3.125

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-251AA and TO-252AA

100

oC/W

TO-220AB

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 12A

1.2

Reverse Recovery Time

trr

ISD = 12A, dISD/dt = 100A/µs

200

NOTES:

2. Pulse test: pulse width

≤ 300ms, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE

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