RFD10P03LSM datasheet(5/8 Pages) INTERSIL

tên linh kiện	RFD10P03LSM

Giải thích chi tiết về linh kiện	10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	INTERSIL [Intersil Corporation]

Trang chủ	http://www.intersil.com/cda/home

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5 / 8 page

7-7

FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

FIGURE 13. SWITCHING TIME vs GATE RESISTANCE

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Test Circuits and Waveforms

FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 17. UNCLAMPED ENERGY WAVEFORMS

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

-80

-40

120

160

0.4

0.8

1.0

1.2

TJ, JUNCTION TEMPERATURE (

oC)

200

VGS = VDS,ID = -250µA

0.6

125

100

150

RGS, GATE TO SOURCE RESISTANCE (Ω)

td(OFF)

td(ON)

VDD = -15V, ID = -10A, RL= 1.50Ω

-30

-22.5

-15

-7.5

-5.00

-3.75

-2.50

-1.25

0.00

IG(REF)

IG(ACT)

IG(REF)

IG(ACT)

t, TIME (

µs)

VDD = BVDSS

RL = 3.0Ω

IG(REF) = -0.25mA

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

VGS = -5V

VDD =BVDSS

800

600

400

200

-5

-10

-15

-20

-25

VDS, DRAIN TO SOURCE VOLTAGE (V)

1200

CISS

COSS

CRSS

1000

VGS = 0V, f = 0.1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

0.01

Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VGS

VDD

VDS

BVDSS

IAS

tAV

RFD10P03L, RFD10P03LSM, RFP10P03L

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