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R5F6451MLFD bảng dữ liệu(PDF) 87 Page - Renesas Technology Corp

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nhà sản xuất  RENESAS [Renesas Technology Corp]
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R5F6451MLFD bảng dữ liệu(HTML) 87 Page - Renesas Technology Corp

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R01DS0072EJ0120 Rev.1.20
Page 87 of 116
Aug 07, 2013
R32C/151 Group
5. Electrical Characteristics
Notes:
1.
Program/erase definition
This value represents the number of erasure per block.
When the number of program/erase cycles is n, each block can be erased n times.
For example, if a word write is performed in 16 different addresses in a block and then the block is
erased, this is counted as a single program/erase operation. However, the same address cannot
be written to more than once per erasure (overwrite disabled).
2.
Data retention includes periods when no supply voltage is applied and no clock is provided.
3.
This data retention includes 3000 hours in Ta = 125°C and 7000 hours in Ta = 85°C.
Figure 5.3
Power Supply Circuit Timing
Table 5.9
Electrical Characteristics of E2dataFlash
(VCC = 3.0 to 5.5 V, VSS =0V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Value
Unit
Min.
Typ.
Max.
—
Program/erase cycles (1)
100000
Cycles
—
Word program time
100
2000
µs
—
Block erasure time
32 byte block
15
200
ms
tPS
Flash memory circuit start-up stabilization time
35
50
µs
—
Data retention (2)
Ta = 55°C (3, 4)
20
Years
4.
Contact a Renesas Electronics sales office for data retention times other than the above condition.
Table 5.10
Power Supply Circuit Timing Characteristics
(VCC = 3.0 to 5.5 V, VSS = 0 V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Measurement
Condition
Value
Unit
Min. Typ. Max.
td(P-R)
Internal power supply start-up stabilization
time after the main power supply is turned on
2ms
t d(P-R)
VCC
PLL oscillator-
output waveform
Internal power supply start-up
stabilization time after the main
power supply is turned on
Recommended
operating voltage
t d(P-R)
Supply voltage for
internal logic



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