IRFF9130 datasheet(3/7 Pages) INTERSIL

3 / 7 page

4-103

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

ISD

Modified MOSFET

Symbol Showing the In-

tegral Reverse

P-N Junction Diode

-6.5

Pulse Source to Drain Current

(Note 3)

ISDM

-26

Source to Drain Diode Voltage (Note 2)

VSD

TC = 25

oC, I

SD = 6.5A, VGS = 0V (Figure 13)

-1.5

Reverse Recovery Time

trr

TJ = 150

oC, I

SD = 6.5A, dISD/dt = 100A/µs

300

Reverse Recovered Charge

QRR

TJ = 150

oC, I

SD = 6.5A, dISD/dt = 100A/µs

1.8

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, starting TJ = 25

oC, L = 17.75mH, R

G = 25Ω, peak IAS = 6.5A. (Figures 15, 16).

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

TC, CASE TEMPERATURE (

oC)

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

TC, CASE TEMPERATURE (

oC)

100

150

-7.0

-5.6

-4.2

-2.8

-1.4

125

t1, RECTANGULAR PULSE DURATION (s)

10-3

10-2

10-5

10-4

0.01

0.1

10-1

PDM

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

SINGLE PULSE

0.1

0.02

0.2

0.5

0.01

0.05

IRFF9130

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