IRFD9120 datasheet(3/6 Pages) INTERSIL

3 / 6 page

4-47

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

ISD

Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction

Diode

-1.0

Pulse Source to Drain Current

(Note 3)

ISDM

-8.0

Source to Drain Diode Voltage (Note 2)

VSD

TC = 25

oC, I

SD = -1.0A, VGS = 0V, (Figure 12)

-1.5

Reverse Recovery Time

trr

TJ = 150

oC, I

SD = -4.0A, dISD/dt = 100A/µs

150

Reverse Recovery Charge

QRR

TJ = 150

oC, I

SD = -4.0A, dISD/dt = 100A/µs

0.9

µC

NOTES:

2. Pulse test: pulse width

≤ 80µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

4. VDD = 25V, starting TJ = 25

oC, L = 555mH, R

G = 25Ω, Peak IAS= 1.0A (Figures 14, 15).

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. OUTPUT CHARACTERISTICS

TA, AMBIENT TEMPERATURE (

oC)

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

100

TA, AMBIENT TEMPERATURE (

oC)

150

125

-1.0

-0.8

-0.6

-0.4

-0.2

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

0.1

0.01

µs

100

µs

1ms

10ms

100ms

SINGLE PULSE

TJ = MAX RATED

TC = 25

OPERATION IN THIS AREA

IS LIMITED BY rDS(ON)

-10

-20

-30

-40

-1

-2

-3

-4

-5

-50

VGS = -7V

VGS = -6V

VGS = -5V

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -4V

PULSE DURATION = 80

µs

VGS = -10V

DUTY CYCLE = 0.5% MAX.

IRFD9120

IRFD9120 bảng dữ liệu(PDF) 3 Page - Intersil Corporation

IRFD9120 bảng dữ liệu(HTML) 3 Page - Intersil Corporation

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL