IRFD310 datasheet(3/6 Pages) INTERSIL

3 / 6 page

4-295

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

ISD

Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Rectifier

0.4

Pulse Source to Drain Current (Note 3)

ISDM

1.6

Source to Drain Diode Voltage (Note 2)

VSD

TJ = 25

oC, I

SD = 1.6A, VGS = 0V (Figure 12)

1.6

Reverse Recovery Time

trr

TJ = 150

oC, I

SD = 1.6A, dISD/dt = 100A/µs

380

Reverse Recovery Charge

QRR

TJ = 150

oC, I

SD = 1.6A, dISD/dt = 100A/µs

2.7

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature.

4. VDD = 40V, starting TJ = 25

oC, L = 44.89mH, R

G = 50Ω, peak IAS = 1.4A.

Typical Performance Curves

Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. OUTPUT CHARACTERISTICS

TA, CASE TEMPERATURE (

oC)

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

100

TC, CASE TEMPERATURE (

oC)

150

125

0.4

0.3

0.1

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

µs

1ms

10ms

µs

TJ = MAX RATED

SINGLE PULSE

0.1

00.1

0.001

100

1000

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

TC = 25

020

0.44

0.88

1.32

1.76

2.20

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80

µs

VGS = 6V

VGS = 7V

VGS = 5V

VGS = 4V

DUTY CYCLE = 0.5% MAX

IRFD310

IRFD310 bảng dữ liệu(PDF) 3 Page - Intersil Corporation

IRFD310 bảng dữ liệu(HTML) 3 Page - Intersil Corporation

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL