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IRF9130 bảng dữ liệu(PDF) 2 Page - Intersil Corporation

tên linh kiện IRF9130
Giải thích chi tiết về linh kiện  -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET
PDF  7 Pages
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nhà sản xuất  INTERSIL [Intersil Corporation]
Trang chủ  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF9130 bảng dữ liệu(HTML) 2 Page - Intersil Corporation

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5-9
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRF9130
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
-100
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
-100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
-12
-7.5
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
-48
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
75
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
500
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to T
J = 125
oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = -250µA, VGS = 0V, (Figure 10)
-100
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = -250µA
-2
-
-4
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
-25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
-12
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = -6.5A, VGS = -10V, (Figures 8, 9)
-
0.25
0.30
Ω
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = -6.5A
(Figure 12)
2
3.7
-
S
Turn-On Delay Time
td(ON)
VDD = 0.5 x Rated BVDSS, ID ≈ -6.5A, RG = 50Ω
RL = 5.7Ω (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-30
60
ns
Rise Time
tr
-
70
140
ns
Turn-Off Delay Time
td(OFF)
-
70
140
ns
Fall Time
tf
-
70
140
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = -10V, ID = -15A, VDS = 0.8 x Rated BVDSS
Ig(REF) = -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-25
45
nC
Gate to Source Charge
Qgs
-13
-
nC
Gate to Drain “Miller” Charge
Qgd
-12
-
nC
Input Capacitance
CISS
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)
-
500
-
pF
Output Capacitance
COSS
-
300
-
pF
Reverse Transfer Capacitance
CRSS
-
100
-
pF
Internal Drain Inductance
LD
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured From the
Source Lead, 6mm
(0.25in) From the Flange
and the Source
Bonding Pad
-
12.5
-
nH
Thermal Resistance Junction to Case
RθJC
-
-
1.67
oC/W
Thermal Resistance Junction to Ambient
RθJA
Typical Socket Mount
-
-
30
oC/W
LS
LD
G
D
S
IRF9130



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