6-5

Thermal Resistance Junction to Case

-

-

1.4

Thermal Resistance Junction to Ambient

-

-

110

(PCB Mount Steady State)

-

-

50

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

MOSFET

Symbol Showing

The Integral

Reverse P-N

Junction Diode

-

-

52 (Note

1)

A

Pulsed Source to Drain Current (Note 2)

-

-

220

A

Source to Drain Diode Voltage (Note 3)

-

-

1.3

V

Reverse Recovery Time (Note 3)

-

81

120

ns

Reverse Recovered Charge (Note 3)

-

210

310

nC

NOTES:

2. Repetitive rating; pulse width limited by maximum junction temperature (See Figure 11).

3. Pulse width

≤ 300µs; duty cycle ≤ 2%.

Typical Performance Curves

FIGURE 1. OUTPUT CHARACTERISTICS

FIGURE 2. OUTPUT CHARACTERISTICS

D

G

S

1

100

1000

0.1

1.0

10

100

20

µs PULSE WIDTH

12V

10V

8.0V

6.0V

4.0V

3.0V

2.5V

15V

10

1

100

1000

0.1

1

10

100

20

µs PULSE WIDTH

12V

10V

8.0V

6.0V

4.0V

3.0V

2.5V

15V

10

HPLR3103, HPLU3103