HIP2060AS2 datasheet(2/8 Pages) INTERSIL

2 / 8 page

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

HIP2060

UNITS

Continuous Drain-Source Voltage Over Operating Junction and Case Temperature Range. . . . . . VDS

Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ISD

Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . IDM

Continuous Drain Current, each Output, all Outputs on (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .IDS

Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . EAS

100

Continuous Power Dissipation at TC = 25

oC (Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . . P

Continuous Power Dissipation, Derate above TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.37

W/oC

Thermal Information

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . θ

oC/W

Operating Case Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC

-40 to 125

Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-40 to 150

Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . VD1S2

NOTES:

1. Pulse width limited by maximum junction temperature.

2. Drain current limited by package construction.

3. VDD = 25V, Start TJ = 25

oC, L = 1.5mH, R

GS = 50Ω, R = 0. See Figures 2, 12, and 13.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain-Source Breakdown Voltage

BVDSS

ID = 100µA, VGS = 0V

TC = -40

oC to

125oC

TC = 25

oC-

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

1.5

2.3

2.7

Drain1-Source2 Breakdown Voltage

(Across D1)

BVD1S2

ID1S2 = 1µA,

VG1S1, VG2S2 = 0V

TC = 25

105

Zero Gate Voltage Drain Current

IDSS

VDS = 60V

VGS = 0V

TC = 25

oC-

µA

Drain1-Source2 Current (Through D1)

ID1S2

VD1S2 = 60V

VG1S1 = 0V, VG2S2 =0V

TC = 25

0.3

µA

TC = 125

oC-

µA

Drain-Source On-State Voltage

(Note 4)

VDS(ON)

ID = 10A, VGS = 15V

0.9

1.25

ID = 10A, VGS = 10V

1.1

1.5

Forward Gate Current, Drain Short

Circuited to Source

IGSSF

VDS = 0V, VGS = 20V

100

Reverse Gate Current, Drain Short

Circuited to Source

IGSSR

VDS = 0V, VGS = -20V

-100

Drain-Source On Resistance (Note 4)

rDS(ON)

VGS = 15V, ID = 10A

TC = 25

0.09

0.135

Ω

VGS = 15V, ID = 10A

TC = 125

0.15

0.21

Ω

VGS = 10V, ID = 10A

TC = 25

0.11

0.15

Ω

VGS = 10V, ID = 10A

TC = 125

0.19

0.25

Ω

Forward Transconductance (Note 4)

gfs

VDS = 15V, ID = 5A

4.5

HIP2060

HIP2060AS2 bảng dữ liệu(PDF) 2 Page - Intersil Corporation

HIP2060AS2 bảng dữ liệu(HTML) 2 Page - Intersil Corporation

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL