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HGTP3N60B3D bảng dữ liệu(PDF) 3 Page - Intersil Corporation

tên linh kiện HGTP3N60B3D
Giải thích chi tiết về linh kiện  7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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HGTP3N60B3D bảng dữ liệu(HTML) 3 Page - Intersil Corporation

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3
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 150
oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 82Ω
L = 1mH
Test Circuit (Figure 19)
-16
-
ns
Current Rise Time
trI
-18
-
ns
Current Turn-Off Delay Time
td(OFF)I
-
220
295
ns
Current Fall Time
tfI
-
115
175
ns
Turn-On Energy
EON
-
130
140
µJ
Turn-Off Energy (Note 1)
EOFF
-
210
325
µJ
Diode Forward Voltage
VEC
IEC = 3A
-
2.0
2.5
V
Diode Reverse Recovery Time
trr
IEC = 1A, dIEC/dt = 200A/µs-
-
22
ns
IEC = 3A, dIEC/dt = 200A/µs-
-
28
ns
Thermal Resistance Junction To Case
RθJC
IGBT
-
-
3.75
oC/W
Diode
3.0
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
TC, CASE TEMPERATURE (
oC)
25
50
75
100
125
150
1
0
3
5
2
4
6
7
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10
700
6
0
2
4
300
400
200
100
500
600
8
0
12
14
16
18
20
TJ = 150
oC, R
G = 82Ω, VGE = 15V L = 500µH
HGTP3N60B3D, HGT1S3N60B3DS



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